BUK7506-55B,127 Allicdata Electronics
Allicdata Part #:

568-6618-5-ND

Manufacturer Part#:

BUK7506-55B,127

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: MOSFET N-CH 55V 75A TO220AB
More Detail: N-Channel 55V 75A (Tc) 254W (Tc) Through Hole TO-2...
DataSheet: BUK7506-55B,127 datasheetBUK7506-55B,127 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: TrenchMOS™
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 6 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
FET Feature: --
Power Dissipation (Max): 254W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Description

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The BUK7506-55B,127 is a part of the transistor family. It belongs to the category of transistors, FETs, and MOSFETs, and is classified as single. It is a type of field-effect transistor (FET) developed specifically for high-power switching and is incredibly various due to its convenience and compact design.

A field-effect transistor (FET) is a semiconductor device consisting of three terminals, each of which is connected to a source, drain, and gate. It is available in both n-channel and p-channel types and operates at high frequencies due to its increased operating frequency and switching speed. One big advantage of FETs is that they have a high input impedance, meaning they consume less power.

The BUK7506-55B,127 is a MOSFET and the most common FET type. It is a semiconductor device which is used to change the current flow between two terminals through the use of an electric field. Unlike traditional transistors or bipolar junction transistors (BJTs), MOSFETs do not need a continuous supply of current in order to operate, allowing them to be controlled using voltage rather than current.This makes them much more efficient than BJTs, as they consume much less power when in operation. This makes them ideal for applications that require a high degree of power efficiency.

The BUK7506-55B,127 MOSFET is specifically designed for high-power switching applications. It is a three-terminal device constructed from a single silicon chip, along with its gate. This device has a maximum voltage of 55V, an input capacitance of 37pF and a maximum drain-source on-state resistance of 0.425Ω. These features make it an ideal choice for power regulation, power conversion, and high efficiency switching.

The BUK7506-55B,127 MOSFET is also well suited for power amplification, motor control, and switching converters. It can also be used in aviation or military applications due to its rugged construction and small size. It is generally used as a power switch in high-power applications where switching speed, low power consumption and a high degree of accuracy are required.

In summary, the BUK7506-55B,127 is a three-terminal MOSFET that can be used in a variety of applications, from high-power switching to motor control and power amplification. It is ideal for applications where power efficiency and low power consumption are necessary, as well as in high-power switching applications. Its robust construction and small size make it a great fit for aviation and military applications, due to its impressive performance in a variety of conditions.

The specific data is subject to PDF, and the above content is for reference

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