BUK7E07-55B,127

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The BUK7E07-55B,127 is a single field-effect transistor (FET). FETs are a type of transistor, similar to a bipolar junction transistor. They are three-terminal voltage-controlled semiconductor devices, containing both n-type and p-type conducting channels. FETs provide a way to control current without depending on a high current in order to switch on the transistor.

The BUK7E07-55B,127 is designed for high-switching performance applications and features an N-Channel MOSFET in a TO-220 package. This particular FET is a 12.7-Volt, N-Channel low on-resistance device that is optimized for fast switching applications with low gate charge and low gate-to-drain capacitance. It features a maximum drain current of 80 amps, a maximum drain-source voltage of 170 volts, and a maximum gate threshold voltage of 5 volts.

The working principle behind FETs is relatively simple. FETs are voltage-controlled, which means that the drain-source resistance, or “on/off” channel, is determined by the applied voltage at the gate. When a voltage is applied to the gate of an n-channel FET, an electric field is created at the channel between source and drain. This electric field causes the electrons to move from source to drain, creating a conducting channel. This process is referred to as the “inversion layer”. The resulting channel conducts an electric current between the source and drain terminals. The amount of current that can flow through the channel is determined by the current limiting resistor, which is in series with the FET.

The BUK7E07-55B,127 is developed for a wide range of applications such as switching, amplifying, and controlling electrical signals. It can be used in consumer electronics, laptop computers, telecommunication, automotive and power systems. It is also ideal for switching power supplies, industrial equipment, and systems with harsh environments. This FET can also be used to provide AC/DC power switching, inrush current limitation, electronic circuit protection, DC to DC conversion, electrostatic discharges (ESDs), and many other applications that require high switching speeds, high peak current capabilities, and superior gate threshold control.

In general, BUK7E07-55B,127 is designed for use in most switching applications. It features a low on-resistance of 19.2 mΩ and can switch from a drain current of 80 A to a maximum drain-source voltage of up to 170 V. Its N-Channel MOSFET design ensures superior gate threshold control, providing superior performance in applications where short rise and fall times or fast switching speeds are needed. Additionally, its fast switching speed makes it suitable for a wide range of power and signal applications.

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