Allicdata Part #: | 1727-5256-2-ND |
Manufacturer Part#: |
BUK9207-30B,118 |
Price: | $ 0.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 30V 75A DPAK |
More Detail: | N-Channel 30V 75A (Tc) 167W (Tc) Surface Mount DPA... |
DataSheet: | BUK9207-30B,118 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.31636 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 185°C (TJ) |
Power Dissipation (Max): | 167W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3430pF @ 25V |
Vgs (Max): | ±15V |
Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 5V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 5 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The BUK9207-30B,118 is a single MOSFET voltage regulator. It is specifically designed to provide low on-resistance and fast switching characteristics without sacrificing high performance, making it ideal for use in a broad range of high performance applications. The MOSFET is an insulated gate field effect transistor (IGFET) which combines the advantages of both the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and the insulation layer of an Insulated Gate Bipolar Transistor (IGBT).
The BUK9207-30B,118 MOSFET is an enhancement mode field effect transistor which consists of a single P-channel MOSFET with a protection diode. The P-channel MOSFET is connected in parallel with the protection diode and has a voltage rating of 80V. The transistor is also rated for a continuous drain current of 30A and a continuous drain-source voltage of 30V.
The BUK9207-30B,118 MOSFET can be used in a variety of application fields. Its fast switching speed and low on-resistance makes it ideal for use in power management, motor control, industrial and automotive applications. In addition, the transistor is suitable for use in low-power applications such as low voltage battery powered systems.
The BUK9207-30B,118 MOSFET works by using an insulated gate to control current flow between the source and the drain. When a forward voltage is applied at the Gate, the transistor is switched on and current begins to flow from the source to the drain. As the gate voltage is increased, the current increases exponentially until it reaches its maximum rating. The transistor can be switched off by reversing the applied gate voltage.
When using the BUK9207-30B,118 MOSFET, it is important to observe a few safety precautions. The MOSFET should not be used for load currents that exceed the device’s continuous drain current rating. In addition, the transient drain current should be limited to the maximum rating specified in the datasheet. It is also important to ensure that the on-state voltage does not exceed the maximum rating. The MOSFET should be operated in a temperature range between -45°C to +125°C, and it should be mounted on a heat sink to ensure proper cooling.
In conclusion, the BUK9207-30B,118 MOSFET is a single P-channel MOSFET voltage regulator designed to provide low on-resistance and fast switching speeds. It is suitable for use in a broad range of high performance applications, and it should be used with caution in order to ensure its safe operation.
The specific data is subject to PDF, and the above content is for reference
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