Allicdata Part #: | 1727-4707-2-ND |
Manufacturer Part#: |
BUK9217-75B,118 |
Price: | $ 0.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 75V 64A DPAK |
More Detail: | N-Channel 75V 64A (Tc) 167W (Tc) Surface Mount DPA... |
DataSheet: | BUK9217-75B,118 Datasheet/PDF |
Quantity: | 7500 |
2500 +: | $ 0.31636 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 185°C (TJ) |
Power Dissipation (Max): | 167W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4029pF @ 25V |
Vgs (Max): | ±15V |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 5V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 15 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 64A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The BUK9217-75B,118 is a single-channel, enhancement-mode MOSFET with integral, reverse-biased, internal body diode. This type of MOSFET, also known as an insulated-gate field Effect transistor (IGFET), works with two main controlling factors – gate-source voltage and drain-source voltage. Gate-source voltage determines whether the MOSFET is in linear operation or saturation. To achieve saturation, VGS must be greater than the specified threshold voltage Vth. The current start to flow when VDS is greater than the drain-to-source breakdown voltage Vds(Br). This particular MOSFET has a drain-source voltage of 75V, an IDS current rating of 59A, and an RDS(on) of 17.6mΩ.
Its applications include commercial switching and amplifier due to its high-power handling capability. The MOSFET can be used for general purpose, arbitray pulse and analog switching, line switching in normal switchboards; voltage and current measurement, drive for power transistors in power amplifiers; and small signal amplification. Additionally, the BUK9217-75B,118 can also be utilized in DC-DC converters, motor control, HID lighting and in UPS systems, solar inverters and DC motor speed control.
When it comes to its working principle, when there are high levels of gate-source voltage (VGS), then the MOSFET will be switched ON and current starts to flow between the drain and source. This occurs when the voltage between the gate and source (VGS) is high enough to make the conducting channel activated. This turns the transistor ON and the current between the drain and source can then flow. The magnitude of the current depends upon the magnitude of the gate-source voltage (VGS). If the VGS is then reduced, the drain-source current reduces and eventually,it shuts off.
When the MOSFET is test with a standard curve tracer, two curves will be obtained, one for VDS and one for IDS. In normal operation, the MOSFET is used in the linear region, meaning VDS and IDS both remain constant. However, when the gate-source voltage (VGS) falls below a particular value, the MOSFET will enter the cutoff region and the drain-source current will drop off.
To sum it all up, the BUK9217-75B, 118 is a single-channel, enhancement mode MOSFET with an IDS current rating of 59A, a RDS(on) of 17.6mΩ, and a drain-source voltage of 75V. Its applications include commercial switching and amplifiers, DC-DC converters, motor control, HID lighting, and power amplifiers, while its working principle is based off the gate-source voltage and drain-source voltage.
The specific data is subject to PDF, and the above content is for reference
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