BUK9226-75A,118

Vgs(th) (Max) @ Id:	2V @ 1mA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	114W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3120pF @ 25V
Vgs (Max):	±10V
Series:	Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs:	24.6 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	45A (Tc)
Drain to Source Voltage (Vdss):	75V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Transistors - FETs, MOSFETs - SingleThe BUK9226-75A,118 is a component from the field of transistors and FETs and MOSFETs. Specifically, it is classified as a single component component. This component can be used in a variety of applications and it has a number of distinct advantages that make it attractive for use in electronic systems. The BUK9226-75A,118 is a P-type enhancement mode power MOSFET. It is a component used to provide electrical control of a current between two elements by using an applied voltage that is lower than the power used within the component. It is notable for having a low drain-source on resistance and relatively low voltage control. That makes it perfect for a variety of applications, such as power supply regulation, post regulation, and DC motor drives. In terms of the specification of the BUK9226-75A,118, it has a drain to source resistances of 75A and 118mohms, a drain to source breakdown voltage of 40V96V, a gate to source voltage (VGS) of -20VDSS, a drain to source resistance of 9.4k ohms, an on-state resistance of 33.5 mOhms, a reverse transfer capacitance of 175pF, and an internal capacitance of 445pF. It operates on a temperature range of -55C to +150C. It also has a continuous drain current at 25C of up to 75A. The working principle of the BUK9226-75A,118 relies on the gate control of electrons between two elements. The gate control of electrons is similar to the on-off control. However, the gate control of electrons gives more control over the electrical current between two elements, by providing a source of resistance between the gate and the source. The source of resistance is provided by the gate, which is triggered using a voltage that is lower than the power used in the component. When the voltage of the gate is higher than the source, electrons will flow from the gate to the source. Conversely, when the voltage of the gate is lower than the source, the flow of electrons will be blocked, thus creating a resistance and allowing for better control of the electrical current. The BUK9226-75A,118 is an excellent choice for a range of applications due to its low voltage control and relatively low drain-source on resistance. It is perfect for applications such as power supply regulation, post regulation and DC motor drives, as well as many other applications where low voltage control is necessary. In conclusion, the BUK9226-75A,118 is a single component component from the field of transistors and FETs and MOSFETs, notable for its low drain-source on resistance and relatively low voltage control. It can be used in a variety of applications, and its low voltage control and relatively low on resistance makes it perfect for power supply regulation, post regulation and DC motor drives.

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