BUK9514-55A,127 Allicdata Electronics
Allicdata Part #:

568-9734-5-ND

Manufacturer Part#:

BUK9514-55A,127

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 55V 73A TO220AB
More Detail: N-Channel 55V 73A (Tc) 149W (Tc) Through Hole TO-2...
DataSheet: BUK9514-55A,127 datasheetBUK9514-55A,127 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 1mA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 149W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3307pF @ 25V
Vgs (Max): ±10V
Series: TrenchMOS™
Rds On (Max) @ Id, Vgs: 13 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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BUK9514-55A is a single N-Channel metal-oxide-semiconductor field-effect transistor (MOSFET). It is manufactured by NXP semiconductors and utilizes their new Hexfet technology. This technology reduces gate charge and therefore the circuit components and layout which translate into reduced costs. The BUK9514-55A transistor is designed for industrial, automotive and medical applications. It is a great choice for applications that need higher voltages, higher switching speeds and low power loss than conventional bipolar transistors.

The BUK9514-55A is a single N-Channel MOSFET with a Drain-Source voltage rating of 55V, a Gate-Source voltage rating of +/-20V and a Drain current of 98A. It offers a wide range of features that make it suitable for a variety of applications. These features include low power losses, low input capacitance, and fast switching speeds.

The main application areas for this transistor is in power supplies, motor drives, audio amplifier circuits, and switching power amplifiers. In power supplies, the transistor is used to provide high current, low voltage drop and fast switching speeds. In motor drives, the transistor is used to switch the power on and off and to control the speed of the motor. In audio amplifier circuits, it is used to provide high gain and low distortion with low power losses. Finally, in switching power amplifiers, it is used for high power output, low power losses and fast switching speeds.

The working principle of a MOSFET is based on the principle of an insulated gate field-effect transistor (IGFET). According to this principle, a voltage is applied to a metal gate which is insulated from the source and the drain of the transistor. When the gate voltage increases, the amount of current flowing from the source to the drain increases. Conversely, when the gate voltage decreases, the amount of current decreases. Therefore, MOSFET transistors can be used to control current flow and voltage levels.

The BUK9514-55A is designed to have high current carrying capacity, making it suitable for applications requiring high switching speeds and low power losses. The gate voltage can be controlled via an external signal which makes the transistor suitable for signal-level switching. Additionally, the transistor has an on-resistance rating of 3.2A, meaning that it can handle high current with low voltage drop. All of these features make the BUK9514-55A a great choice for power, motor drive and audio applications.

In conclusion, the BUK9514-55A is a single N-Channel MOSFET with a wide range of features. Its main applications are in power supplies, motor drives, audio amplifier circuits, and switching power amplifiers. It offers high current carrying capacity, low on-resistance, and low power losses. It is also suitable for signal-level switching, making it a great choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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