BUK9609-75A,118 Discrete Semiconductor Products

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The BUK9609-75A,118 is a single N-channel MOSFET transistor device commonly used in many applications. It is a voltage-controlled field-effect transistor (FET) made of a three-layer semiconductor material, consisting of n-, i-, and p-doped layers. The device has an N-channel between its source and drain which is opened or closed by a voltage applied to its gate. This turns the device from an insulating device to a conductive device, which allows current to flow from the source to the drain.

The BUK9609-75A,118 offers excellent on-state behavior. It features a maximum current of 75 amperes, a maximum drain-source voltage of 90 volts, a maximum drain-source on-resistance of 0.0034 ohm, and a maximum gate threshold voltage of 2.4 volts. It operates at a maximum junction temperature of 175⁰C. This device is a later version of the BUK9609-75A,117 and offers improved drain-source on-resistance.

The working principles of the BUK9609-75A,118 are based on the voltage applied to its gate. When a positive voltage (greater than the threshold voltage) is applied to its gate, it increases the electrostatic force at the surface of its N-channel, which opens it. With the gate open, an electric current can flow from the drain to the source. When the voltage is removed, the N-channel closes, resulting in the transistor in an off-state. The biasing of the source and gate can be used to control the amount of current that is allowed to flow through the transistor.

The BUK9609-75A,118 can be found in common applications in the power and automotive sectors. It is used for switching and power control applications such as switch mode power supplies, battery management systems, motor control, and electronic ignition systems in vehicles. It is also used in high-power amplifier designs, power boosters, and powerline communication links. The device\'s high current and low on-resistance help reduce loss and improve system efficiency.

The BUK9609-75A,118 is a single N-channel MOSFET transistor device commonly used in many applications. It is a voltage-controlled field-effect transistor with a maximum current of 75 amperes and a maximum drain-source voltage of 90 volts, making it suitable for power and automotive applications. Its working principles are based on the voltage applied to the gate, and it can be used in many applications such as switch mode power supplies, motor control, and power boosters. The device\'s high current and low on-resistance make it an ideal choice for reducing power loss and improving system efficiency.

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