BUK965R8-100E,118

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The BUK965R8-100E,118 field-effect transistor is one of the many types of transistors available. It is an enhancement-mode, N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is a high-voltage and high-current switching device. This type of transistor is used in large appliances such as refrigerators and washing machines, as well as medical imaging systems, information and communication electronics, and power supplies.

The working principle of a field-effect transistor is based on the modulation of a channel between the source and drain terminals. A gate terminal, which is connected to a gate electrode, is used to control the transistor\'s characteristics. In the case of an N-channel MOSFET, this channel is modulated by an applied negative voltage to the gate. In contrast, a P-channel MOSFET is normally modulated by applying a positive voltage to the gate.

The MOSFETs are further categorized into three main types, depletion-mode, enhancement-mode, and active-mode. A depletion-mode MOSFET device operates in the depletion-mode while a enhancement-mode MOSFET device works in the enhancement-mode. Active-mode MOSFETs operate in both depletion-mode and enhancement-mode.

The BUK965R8-100E,118 MOSFET is an enhancement-mode device, which can be used for high-voltage and high-current switching in systems such as motor driving and inverters. The BUK965R8-100E,118 is specifically designed for higher breakdown voltages, higher peak current ratings and smaller on-state resistance than conventional MOSFETs. It has a large on-state resistance due to its high voltage rating, which provides higher EMC immunity, making it suitable for high-voltage, high-power applications.

The BUK965R8-100E,118 MOSFET device has a rated continuous drain current of 100A, a maximum operating temperature of -40°C to +175°C and a breakdown voltage of 600V. The trade-off between low on-state resistance and high breakdown voltage makes the BUK965R8-100E,118 an ideal choice for those applications that require both high power handling and EMC protection.

In conclusion, the BUK965R8-100E,118 is an enhancement-mode N-channel MOSFET that can be used for high-voltage and high-current switching in applications such as motor driving and inverters. With its high breakdown voltage, higher peak current ratings, and smaller on-state resistance, it is an ideal choice for those applications that require both high power handling and EMC protection.

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