Allicdata Part #: | 1727-2467-2-ND |
Manufacturer Part#: |
BUK9K13-60EX |
Price: | $ 0.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET 2N-CH 60V 40A LFPAK56 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 40A 64W Surfac... |
DataSheet: | BUK9K13-60EX Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.41721 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 40A |
Rds On (Max) @ Id, Vgs: | 12.5 mOhm @ 10A, 5V |
Vgs(th) (Max) @ Id: | 2.1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 22.4nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 2953pF @ 25V |
Power - Max: | 64W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-1205, 8-LFPAK56 |
Supplier Device Package: | LFPAK56D |
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BUK9K13-60EX Application Field and Working Principle
The BUK9K13-60EX transistor is a power MOSFET array from NXP. The transistor has a diverse range of applications, from enabling high-efficiency motor control to providing robust protection against surge currents within battery management systems.
The BUK9K13-60EX is a three-channel trench MOSFET that integrates the three FETs in a single package. The die is fabricated on a silicon substrate, along with the gate terminals, source terminals, and robust power connections. The BUK9K13-60EX is a monolithic integrated package and is ideal for direct mounting on a PC board.
Features
The BUK9K13-60EX has several features that make it ideal for this range of applications. It offers high blocking stability, low on-state resistance, thermal non-saturation operation, and a fast switching speed. The BUK9K13-60EX also has high-efficiency and low-gate charge for better performance.
The device also has a three-channel configuration, which allows it to be used in circuit configurations where signal or voltage control of multiple FETs is needed. It offers a maximum voltage rating of 30V, with a maximum drain current of 10A, and a maximum drain-source voltage (VDS) of 8V. The array has a maximum switching-on time of 10 ns and a maximum switching-off time of 14 ns.
Application Field and Working Principle
The BUK9K13-60EX is used in various industry applications, including, but not limited to, automotive, electric motor controller, charger, and robot applications. It is also used in motor drive applications, where low-inductance packages are required.
The working principle of the transistors is same as any other MOSFET. They are composed of a source, gate, and drain connection. When an electric potential difference is applied between the gate and the source, it causes a channel to form between the source and the drain. This, in turn, allows a current to flow from the drain to the source.
The advantage of using the array is that three FETs can be controlled simultaneously in order to reduce switching losses and improve efficiency. The array can also be used in circuits to protect against surge currents, as the devices can handle high drain-source voltages without suffering from any breakdown.
Conclusion
The BUK9K13-60EX is a three-channel trench MOSFET transistor array from NXP. This array is suitable for various automotive, electric motor controller, charger, and robot applications, due to its high blocking stability, low on-state resistance, thermal non-saturation operation, and fast switching speed. The array contains three FETs, which can be controlled simultaneously, thereby reducing switching losses and improving efficiency. In addition, the array is also ideal for applications requiring protection against surge currents such as in battery management systems.
The specific data is subject to PDF, and the above content is for reference
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