Allicdata Part #: | 1727-2229-2-ND |
Manufacturer Part#: |
BUK9880-55/CUF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 55V 7.5A SOT223 |
More Detail: | N-Channel 55V 7.5A (Tc) 8.3W (Tc) Surface Mount SO... |
DataSheet: | BUK9880-55/CUF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | TrenchMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 7.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Rds On (Max) @ Id, Vgs: | 80 mOhm @ 5A, 5V |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | 650pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 8.3W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-223 |
Package / Case: | TO-261-4, TO-261AA |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Buk9880-55/CUF is a silicon N-channel enhancement mode MOSFET (metalloxide semiconductor field effect transistor). It is commonly used in industrial applications to control current and voltage in low and medium power circuits. The surface mount device (SMD), which has a single black stripe on the top, comes with an on-chip and low on-resistance structure. It is made of high-purity silicon material and is suitable for the computer, consumer and communications applications.
The Buk9880-55/CUF MOSFET is a switching device. It works by controlling the current flow in a circuit. It does this by using two terminals, or gates. The gate allows the current to flow into the channel between the two terminals, and it also controls the flow of current by manipulating the voltage applied to it. The knob or switch on a MOSFET acts as an electronic switch, controlling the current flow based on the voltage applied to the on/off switch.
The Buk9880-55/CUF MOSFET features low leakage current and low on-resistance. It also features an on-chip, low-power-off-state structure. This structure allows the device to stay powered even when the control voltage is removed, allowing it to remain in an low-power-off state, thus consuming less power while in this state. This feature makes the Buk9880-55/CUF suitable for consumer, communication and computer applications.
The working principle of the Buk9880-55/CUF MOSFET is the same as that of many other MOSFET devices. When the voltage applied to the gate is high, the current flows freely; when the voltage applied to the gate is low, the current flow is restricted. This is because, when there is a voltage at the gate, it will attract electrons from the source terminal and push them into the drain terminal. Thus, the current flow is determined by the gate voltage.
The Buk9880-55/CUF MOSFET can be used in many industrial and consumer applications. In consumer electronics, such as cell phones and portable media players, it is used to control the power output of audio amplifiers, as well as audio and video inputs from the device to the media player or mobile phone. In industrial settings, it is used to control voltage and current in low to medium power circuits such as: power amplifiers, motor controllers, and analog amplifiers.
The Buk9880-55/CUF MOSFET is an excellent choice for controlling voltage, current, and power output. It is a reliable, low cost, and highly efficient device with a wide range of applications. It can be used in many consumer and industrial applications, and its low leakage current and low on-resistance offer great performance and power savings in low power circuits.
The specific data is subject to PDF, and the above content is for reference
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