BUK9832-55A,115 Allicdata Electronics

BUK9832-55A,115 Discrete Semiconductor Products

Allicdata Part #:

568-8032-2-ND

Manufacturer Part#:

BUK9832-55A,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: MOSFET N-CH 55V 12A SOT223
More Detail: N-Channel 55V 12A (Tc) 8W (Tc) Surface Mount SOT-2...
DataSheet: BUK9832-55A,115 datasheetBUK9832-55A,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Automotive, AEC-Q101, TrenchMOS™
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 29 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 1594pF @ 25V
FET Feature: --
Power Dissipation (Max): 8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BUK9832-55A is a single N-Channel enhancement mode Field Effect Transistor (FET) from Infineon, which is based on the revolutionary Trench MOSFET technology. This device has very low gate charge for low switching losses and is thus ideal for applications where low on-resistance, low switching losses and improved heat dissipation are critical.

The primary application of BUK9832-55A is for switching applications in high current DC-DC converters, such as the Buck (step down) DC-DC converters. The device can reach a maximum current of 115 A and a maximum drain source voltage of 600 V. This high current and voltage rating makes it suitable for a wide range of applications, such as high power, automotive, and industrial applications.

The BUK9832-55A device works on the principle of transfer of charge through a channel between source and drain. This channel is formed in the semiconductor material between source and drain when a gate bias is applied. The channel resistance is controlled by the gate voltage, enhancing or decreasing the channel conductivity, which in turn controls the current flowing through the drain terminal. The device also has on-resistance and gate-charge characteristics that are temperature insensitive, ensuring a superb timed performance for a wide range of operational temperatures.

The device provides superior current-handling capacity, allowing superior power and efficiency. Its superior thermal design allows it to maintain a low junction temperature even with high load currents and high load resistances. This is achieved by better control of heat generated from the device. BUK9832-55A also offers superior EMI shielding, making it suitable for high speed applications such as switching power supplies and high speed PWM power converters.

BUK9832-55A is an ideal choice for high current switching applications, due to its high current carrying capabilities and superior thermal design. Its superior current-handling capacity, excellent EMI shielding, and wide temperature range make it ideal for a variety of applications, such as automotive and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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