BUK9832-55A,115 Discrete Semiconductor Products |
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Allicdata Part #: | 568-8032-2-ND |
Manufacturer Part#: |
BUK9832-55A,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 55V 12A SOT223 |
More Detail: | N-Channel 55V 12A (Tc) 8W (Tc) Surface Mount SOT-2... |
DataSheet: | BUK9832-55A,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 29 mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | 1594pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 8W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-223 |
Package / Case: | TO-261-4, TO-261AA |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BUK9832-55A is a single N-Channel enhancement mode Field Effect Transistor (FET) from Infineon, which is based on the revolutionary Trench MOSFET technology. This device has very low gate charge for low switching losses and is thus ideal for applications where low on-resistance, low switching losses and improved heat dissipation are critical.
The primary application of BUK9832-55A is for switching applications in high current DC-DC converters, such as the Buck (step down) DC-DC converters. The device can reach a maximum current of 115 A and a maximum drain source voltage of 600 V. This high current and voltage rating makes it suitable for a wide range of applications, such as high power, automotive, and industrial applications.
The BUK9832-55A device works on the principle of transfer of charge through a channel between source and drain. This channel is formed in the semiconductor material between source and drain when a gate bias is applied. The channel resistance is controlled by the gate voltage, enhancing or decreasing the channel conductivity, which in turn controls the current flowing through the drain terminal. The device also has on-resistance and gate-charge characteristics that are temperature insensitive, ensuring a superb timed performance for a wide range of operational temperatures.
The device provides superior current-handling capacity, allowing superior power and efficiency. Its superior thermal design allows it to maintain a low junction temperature even with high load currents and high load resistances. This is achieved by better control of heat generated from the device. BUK9832-55A also offers superior EMI shielding, making it suitable for high speed applications such as switching power supplies and high speed PWM power converters.
BUK9832-55A is an ideal choice for high current switching applications, due to its high current carrying capabilities and superior thermal design. Its superior current-handling capacity, excellent EMI shielding, and wide temperature range make it ideal for a variety of applications, such as automotive and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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