BUK963R2-40B,118 Discrete Semiconductor Products

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Transistors are widely used in electronics, making them an essential element of various devices. A particular QFN (Quad Flat Nonlead) transistor, the BUK963R2-40B,118, is a Mosfet (Metal Oxide Semiconductor Field Effect Transistor) that helps in controlling the current flow section of more complex electronic circuits.

Mosfets are the most commonly used type of transistor which provides control over current flow with zero gate current, making them more efficient electrical switches than other types of transistors. The BUK963R2-40B,118 is a single-channel device, meaning it can control a single current loop.

The 118 package of the BUK963R2-40B is designed to resist a maximum operating junction temperature of 150 degrees Celsius and a maximum drain-source voltage rating of 40 volts. As the maximum drain-source voltage rating is less than the total gate-source voltage rating, the BUK963R2-40B can be used in high-impedance applications, making it suitable for various operations.

The BUK963R2-40B is manufactured with an N-Channel Field Effect structure, making it an ideal choice for applications that require high switching speeds and low power dissipation. This transistor is highly resistant to electrostatic discharge, making it a reliable choice for digital logic applications.

The BUK963R2-40B is extensively used in motor control, audio and video stage controls, magnetic sensors, battery management systems, power supply controls, switches, and other high power applications. Its low package profile and convenient connection to the circuit board make it a great choice for high current applications.

The BUK963R2-40B works by allowing a relatively low-level signal, generated by a voltage source, to control a very large current flowing through its channel. When a voltage signal is applied to the gate of the transistor, a layer of electrons is created in the channel, allowing a current to pass through it. This current is controlled by the amount of voltage applied to the gate.

The threshold voltage of the BUK963R2-40B is the point at which the current starts to flow through the channel. This voltage varies depending on the type of device, with some devices having a higher threshold voltage than others. Beyond this threshold voltage, the current flowing through the channel increases exponentially with the voltage increases.

For the BUK963R2-40B, certain device parameters, such as drain-source saturation voltage, gate threshold voltage and transconductance, must be taken into consideration when selecting this transistor for an application. Various factors, such as the amount of current being switched, the power dissipation, frequency, switching speed and temperature must also be kept in mind.

The BUK963R2-40B is a powerful, reliable transistor with numerous features. Its N-Channel structure makes it an ideal choice for applications where high switching speeds and low power dissipation are desired. Its low package profile and convenient connection to the circuit board make it an attractive option for various high current operations. This single-channel device is a versatile choice for both digital and analog applications. When selecting the BUK963R2-40B, certain device parameters and factors must be taken into account.

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