Allicdata Part #: | 1727-7229-ND |
Manufacturer Part#: |
BUK9E06-55A,127 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 55V 75A I2PAK |
More Detail: | N-Channel 55V 75A (Tc) 300W (Tc) Through Hole I2PA... |
DataSheet: | BUK9E06-55A,127 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 5.8 mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Vgs (Max): | ±15V |
Input Capacitance (Ciss) (Max) @ Vds: | 8600pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 300W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | I2PAK |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Description
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###### BUK9E06-55A,127 application field and working principleBUK9E06-55A,127 is a type of single MOSFET that provides current control and low RDS (on) value. It is often used in industrial automation, power converters and power distribution as well as used in switch mode power supplies (SMPS), servo motors, solenoids and other electromechanical actuators. It is generally used for commutation of large currents with fast switching requirements.MOSFETs are a type of transistor with an insulated gate, which is in the form of an insulated-gate field-effect transistor (IGFET). They are versatile and can be used in both amplifying and switching applications. MOSFETs offer many advantages over other types of transistors, such as fast switching speeds, low RDS (on) values and a high current handling capacity.A MOSFET is an unipolar transistor that uses an insulated gate to control the current or voltage flowing in a circuit. The gate acts as a switch that can either turn the transistor on or off, depending on the voltage applied to the gate. The MOSFET has five main terminals: source, drain, gate, substrate and body. The body is the substrate and the source is the area from which electrons flow from the body to form a conductive path. The drain is the area where the electrons flow. The gate is the control point that ultimately switches the transistor either on or off by changing the voltage on the gate.The working principle of the BUK9E06-55A,127 can be explained as follows. When a positive voltage (Vgs) is applied to the gate, the current flows between the source and the drain. This allows the current to travel through the MOSFET under certain conditions, and thus the desired circuit operation is achieved. When the Vgs is lowered, the current passing through the MOSFET is drastically reduced and the circuit is disabled.The BUK9E06-55A,127 can be used in many applications including switching power supplies, automotive applications, and industrial automation. They can reliably handle current levels up to 55A and offer superior noise protection compared to other single MOSFETs.The main advantages of this MOSFET include low input capacitance, fast switching speed and low RDS (on) values. The combination of these features makes the BUK9E06-55A,127 an ideal option for high current applications that require fast switching speeds and low power losses.In conclusion, the BUK9E06-55A,127 is a single MOSFET that provides excellent current control and low RDS (on) value, making it suitable for applications such as switching power supplies, automotive electronics and industrial automation. It offers excellent noise protection, fast switching speeds and low input capacitance. This makes the BUK9E06-55A,127 an ideal choice for applications where fast switching speeds and low power losses are required.
The specific data is subject to PDF, and the above content is for reference
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