BUK961R7-40E,118

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The BUK961R7-40E,118 is a type of metal oxide semiconductor field effect transistor (MOSFET), specifically a metal oxide semiconductor insulated gate field effect transistor (MOSFET). As a single MOSFET, the BUK961R7-40E,118 is a four terminal device with gate, drain, source, and body connections. The BUK961R7-40E,118 has two gate terminals (gate and body connections) and two source/drain terminals (source and drain).

The BUK961R7-40E,118 is a high voltage MOSFET. Its drain to source breakdown voltage is 40 V, with a maximum drain current of 5 A and a maximum drain to source on-state resistance of 0.9 ohms. It has a typical gate charge of 6.7 nC and uses a logic-level gate drive. Because of its high voltage and low on-state resistance, the BUK961R7-40E,118 is generally used in applications such as motor control, DC/DC conversion, DC/AC conversion, RF amplifiers and switching applications.

The BUK961R7-40E,118 works on the principle of a MOSFET in which the voltage applied to the gate controls the current flow between the drain and source terminals. The gate is electrically insulated from the channel by an oxide layer. When a voltage is applied to the gate, it attracts electrical charges to the surface of the channel, creating an electron-rich region in the channel, allowing current to flow. Since the channel is insulated from the gate, only a small amount of current is required to control the high current flowing between the drain and source.

The BUK961R7-40E,118 also has a voltage controlled threshold (V CT). When the gate voltage exceeds the V CT, the drain current increases and a linear region is entered. The V CT can be used to reduce switching losses in high frequency and high power applications, as well as ensure proper MOSFET operation when one of the drain and source terminals is connected to a low voltage supply.

In conclusion, the BUK961R7-40E,118 is a high voltage MOSFET that is used in applications requiring a high voltage and low on-state resistance. The MOSFET works on the principle of controlling current flow between the drain and source terminals with a small amount of applied voltage, and has a voltage controlled threshold which helps reduce switching losses and ensure proper MOSFET operation.

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