BUK9523-75A,127

Vgs(th) (Max) @ Id:	2V @ 1mA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	138W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3120pF @ 25V
Vgs (Max):	±10V
Series:	TrenchMOS™
Rds On (Max) @ Id, Vgs:	22 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	53A (Tc)
Drain to Source Voltage (Vdss):	75V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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Introduction

The BUK9523-75A,127 is a high power, medium voltage p-channel enhancement mode vertical trench MOSFET. It offers excellent ruggedness and low gate charge with large capacitance and fast switching speed. This MOSFET also has built-in ESD protection, providing easily-controlled source-drain diodes with resistance of <15mΩ at 10V. Due to it\'slarge capacitance and fast switching, it is suitable for high current and long switching times, as well as power switches, PWM inverters and switching regulators.

Application Fields

The BUK9523-75A,127 has a wide range of applications. It is designed for use as a high and medium voltage switch for power management systems, automotive applications and solar power. It is also widely used in DC-DC converters and short circuit protection switches for DC motor control. Additionally, the BUK9523-75A,127 can be used in lighting, white goods and general consumer electronics applications.

Working Principle

The BUK9523-75A,127 is a MOSFET, which is an important type of transistor. A MOSFET has three terminals, the source, gate, and drain. As the gate voltage is increased, electrons start to accumulate in the device, causing a current to flow between the source and drain. This current is controlled by the applied voltage on the gate terminal. The MOSFET also has a body diode which prevents conduction when the polarity of the voltage is reversed. In addition, the device also has built-in ESD protection. The BUK9523-75A,127 is an enhancement-mode device, meaning that the device requires a positive voltage on the gate terminal to conduct a current. The device is rated at 75A, and has a maximum voltage rating of 40V and a maximum drain-source voltage, Vds, of 25V. Additionally, the device has a total gate charge of 4.3nC and a maximum on-state resistance of 0.0017 ohms.

Conclusion

The BUK9523-75A,127 is a medium voltage p-channel enhancement mode vertical trench MOSFET. It offers excellent ruggedness and low gate charge with large capacitance and fast switching speed. Its wide range of applications, including high and medium voltage switches for power management systems, DC-DC converters and short circuit protection for DC motor control, automotive applications and solar power, means that it is a versatile component for numerous applications. Additionally, its ESD protection makes it suitable for use in sensitive electronic devices.

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