Allicdata Part #: | BUK9Y12-80E,115-ND |
Manufacturer Part#: |
BUK9Y12-80E,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 80V LFPAK |
More Detail: | N-Channel 80V Surface Mount LFPAK56, Power-SO8 |
DataSheet: | BUK9Y12-80E,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 80V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Supplier Device Package: | LFPAK56, Power-SO8 |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BUK9Y12-80E,115 is a single N-Channel Enhancement Mode Field Effect Transistor (FET). This component is designed for applications ranging from low frequency/low level switching and amplifier circuits up to high speed logic controlled switch. It is an effective component for automated processes, especially when they require digital switches and transistors. The component offers a variety of features and design, including low gate and drain capacitance, low drain leakage, low thermal resistance and improved reliability.
The BUK9Y12-80E,115 offers a maximum drain-to-source voltage rating of 80 V with a maximum drain current of 115A. The component is designed to handle high-voltage and current requirements in a variety of applications. It also offers a low on-resistance, integrated ESD protection, reverse current and low thermal resistance for efficient operation.
The component uses a metal-oxide-semiconductor field effect transistor (MOSFET) technology. This technology allows for small size, low power and fast switching speed, making it suitable for use in a variety of applications requiring low-power, fast switching and low-noise operation. The component can be used in any circuit requiring high-voltage, high-current and fast switching.
The working principle of the component involves controlling the current flow in the circuit with a gate voltage. When a gate voltage is applied to the component, electrons flow from the source to the drain and the current flow is controlled by the gate. The component has a drain-source PN-junction, which makes it a preferred choice for use in digital level switching or logic-level switching circuits.
The component is commonly used in applications such as power supply converters, motor control, automotive, audio and video switching, motor control and switching, high speed logic circuits and others. The component is also well suited to applications requiring precision control and fast switching.
The BUK9Y12-80E,115 has several advantages over other FETs, including a high-current drive, low thermal resistance, high-voltage operation, low capacitance and low on-resistance. It is designed to provide superior performance and reliability compared to other transistors. The component has a long operating life and is designed to withstand a wide range of conditions. This makes it an ideal choice for a variety of applications.
The BUK9Y12-80E,115 is an effective component for a variety of applications. It has a wide range of features and design, superior performance and reliability, and a long operating life. This makes it well-suited for use in a wide range of applications, including those requiring power conversions, audio and video switching, motor control, high-speed logic circuits and others.
The specific data is subject to PDF, and the above content is for reference
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