BUK9K134-100EX

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BUK9K134-100EX Application Field and Working Principle

The BUK9K134-100EX is an OptiMOS Power-Trench MOSFET Array, a type of field-effect transistor (FET) array that finely controls and regulates power. BUK9K134-100EX OptiMOS devices are categorized as FETs and MOSFETs (metal oxide semiconductor field-effect transistors). They are commonly used for a range of electronic applications, though their primary purpose is as an array for power regulation applications.

Types of Power-Trench MOSFETs

Power-Trench MOSFETs contain a multi-finger layout, which gives them the ability to operate at higher frequencies and carry larger currents than other FETs. BUK9K134-100EX OptiMOS Power-Trench MOSFETs use extremely thin walls of capping nitrided oxide, allowing the MOSFETs to maintain their excellent temperature stability without any substantial sacrifice of power output. They are created using an Ultra-Thin Body and Buried Oxide (UTBB) process that provides more efficient cooling to the chip itself, helping to minimize the form factor and reduce thermal resistance, allowing the MOSFETs to run more efficiently.

Area of Use of BUK9K134-100EX

The BUK9K134-100EX, for instance, features a standard logic-level power MOSFET, which makes it an ideal candidate for applications requiring fast switching times, such as industrial motor control, low-noise power supplies, LED drivers, DC/DC converters, and HVAC controls. The device also has a very low on-state resistance, which helps to minimize power dissipation. This makes it well-suited for applications that require low power consumption, such as those found in server and storage systems, battery management systems, and lightning systems.

Working Principle of BUK9K134-100EX

The BUK9K134-100EX OptiMOS Power-Trench MOSFET Array operates using the familiar principles of FETs and MOSFETs. FETs, in general, are four-terminal devices comprised of a source, gate, and drain terminals that control the passage of current through the device. This current is regulated by an electric field generated by the gate terminal.

In the case of the BUK9K134-100EX, the array is comprised of multiple FETs, each of which has its own gate and drain terminals. The gate terminal is connected to a voltage supply that is used to change the electric field strength, thereby controlling the amount of current passing through the device. The drain terminal is connected to the load, which can be either AC or DC. The source terminal is connected to the power supply and acts as a reference point.

When an appropriate gate voltage is applied, a population inversion of the source-drain voltage can be established. This creates an electric field, allowing a conduction channel to form. Electrons are then allowed to flow between the source and drain terminals, creating a current that is regulated by the gate voltage.

Conclusion

The BUK9K134-100EX OptiMOS Power-Trench MOSFET Array is a type of field effect transistor that is used in a variety of power regulation and switching applications. With its low on-state resistance and excellent temperature stability, it is well-suited for applications with strict power requirements. The device operates using the standard FET and MOSFET principles of population inversion and electric field control.

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