
BUK9M19-60EX Discrete Semiconductor Products |
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Allicdata Part #: | 1727-2574-2-ND |
Manufacturer Part#: |
BUK9M19-60EX |
Price: | $ 0.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 60V 38A LFPAK |
More Detail: | N-Channel 60V 38A (Tc) 62W (Tc) Surface Mount LFPA... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.20000 |
10 +: | $ 0.19400 |
100 +: | $ 0.19000 |
1000 +: | $ 0.18600 |
10000 +: | $ 0.18000 |
Vgs(th) (Max) @ Id: | 2.1V @ 1mA |
Package / Case: | SOT-1210, 8-LFPAK33 (5-Lead) |
Supplier Device Package: | LFPAK33 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 62W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1814pF @ 25V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 13.8nC @ 5V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 17 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 38A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BUK9M19-60EX transistor, a power MOSFET from NXP Semiconductors, is a discrete single-transistor device and a member of the Field Effect Transistor (FET) family. It is a high-voltage, high-temperature, high-current (HVHT) power device which has a wide range of applications, ranging from motor control to medical imaging and industrial applications.
The BUK9M19-60EX is a three-dimensional field effect transistor composed of three main terminals. A gate terminal is the input to the device, while the source and drain terminals are in the output section. There are also two additional terminals, the tab and body, which are electrically connected to the source terminal. A gate-to-source voltage is applied to the gate terminal when this type of transistor is in use, creating a field effect.
As current starts to flow from the source to the drain, the field effect is created. This field effect acts as a barrier between the source and drain terminals, increasing the resistor between them, which reduces the current flowing from the source to the drain. The gate voltage must remain high in order to maintain the barrier effect, and this is typically done using a voltage regulator.
The BUK9M19-60EX has an avalanche rating of 700 V and a power dissipation of 89 W. Its maximum gate-source voltage is typically 12 V. This type of transistor is designed to be used in applications where high-voltage and high-temperature operation is required. The BUK9M19-60EX is also a rugged device, with a maximum temperature range of -55°C to +125°C.
The major advantages of the BUK9M19-60EX transistor include its reliable and dependable operation, its robust design, and its relatively low cost. This makes it an ideal choice for a wide range of applications, including motor control, medical imaging, and industrial applications. It is a popular choice for designers who need to rely on a reliable, robust, and efficient device.
In summary, the BUK9M19-60EX is a reliable, high-voltage, high-current device that is suitable for a wide range of applications. Its rugged design and relatively low cost make it a popular choice for designers who need a reliable and dependable transistor. Thanks to its efficient operation, it is an attractive choice for medical imaging and industrial applications, as well as motor control applications.
The specific data is subject to PDF, and the above content is for reference
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