Allicdata Part #: | 1727-2577-2-ND |
Manufacturer Part#: |
BUK9M24-60EX |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 60V 32A LFPAK |
More Detail: | N-Channel 60V 32A (Tc) 55W (Tc) Surface Mount LFPA... |
DataSheet: | BUK9M24-60EX Datasheet/PDF |
Quantity: | 3000 |
Vgs(th) (Max) @ Id: | 2.1V @ 1mA |
Package / Case: | SOT-1210, 8-LFPAK33 (5-Lead) |
Supplier Device Package: | LFPAK33 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 55W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1469pF @ 25V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 12.4nC @ 5V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 21 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 32A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The BUK9M24-60EX is a high voltage MOSFET transistor used for high power switch mode applications. It is a single MOSFET device with a low gate threshold voltage and a high drain-source breakdown voltage of 60V. It is also capable of providing up to six hundred amps of continuous current, making it ideally suited for high power applications.
The BUK9M24-60EX transistor has a variety of applications in the field of industrial power switching. It can be used in industries such as automotive, construction, aviation, and medical markets. In the automotive industry, it can be used in power switching systems such as brushless DC motors and high voltage DC/AC inverters. In the construction, aviation and medical markets, it can be used in critical and high power applications such as power management, EMS power switching and communication control.
The working principle of the BUK9M24-60EX is based on the transfer of electrons from one electrode to another. It uses a charge transfer principle wherein electrons are transferred from the source electrode to the drain electrode and vice versa. The voltage applied across a MOSFET’s source and drain electrode determines the current flowing through the device. The on/off state of the transistor is determined by the application of a gate current, which is used to control the magnitude of the current flowing through the device.
In addition, the BUK9M24-60EX transistor has a low gate threshold voltage (VGS), which allows it to be driven by a low-voltage logic family. This makes it ideal for digital signal processing and consumer electronics applications, where reliable switching operations are necessary. It is also ideal for use in high power switch mode power supplies and automotive applications, where high current and accurate current control is required.
The BUK9M24-60EX transistor is a high-performance, single MOSFET device that is suitable for a wide range of high power switching applications. It has a robust construction and high drain-source breakdown voltage, making it suitable for applications that require accurate control of high currents. It is also capable of providing up to six hundred amps of continuous current, making it an ideal choice for high power applications.
The specific data is subject to PDF, and the above content is for reference
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