
Allicdata Part #: | 1727-2579-2-ND |
Manufacturer Part#: |
BUK9M34-100EX |
Price: | $ 0.26 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 100V 29A LFPAK |
More Detail: | N-Channel 100V 29A (Tc) 79W (Tc) Surface Mount LFP... |
DataSheet: | ![]() |
Quantity: | 1000 |
1500 +: | $ 0.23045 |
Vgs(th) (Max) @ Id: | 2.1V @ 1mA |
Package / Case: | SOT-1210, 8-LFPAK33 (5-Lead) |
Supplier Device Package: | LFPAK33 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 79W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2844pF @ 25V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 24.7nC @ 5V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 34 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 29A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The BUK9M34-100EX is a silicon N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by Infineon. It is used in electronic circuits to switch on or off the electrical signals and is highly reliable, efficient and accurate. It is available in single die package and can be used in a wide range of applications such as power supply controllers and audio amplifiers.
Working principle
MOSFETs work on the basis of the depletion region created by the movement of holes and electrons in a semiconductor material. The depletion region consists of a channel that is deeply embedded in the structure of the material and is connected both to source and drain electrodes. When a small voltage difference is applied between the source and the drain, a large electric field is created that controls the flow of current. This electric field is the source of the on or off switching of the BUK9M34-100EX MOSFET.
The BUK9M34-100EX is a depletion mode MOSFET, which means that it doesn’t require any gate voltage to turn on the device. It has a breakdown voltage of 100 V and is suitable for operating frequencies up to 1 MHz. The on-state resistance (RDSon) of the device is very small and the maximum current rating is 23 A.
Application Field
The BUK9M34-100EX can be used in many different application fields. It has a low on resistance (RDSon) and is therefore suitable for circuit in which maximum current with minimum power loss has to be achieved. It is most commonly used in power supply controllers, inverters, converters, audio amplifiers, switching regulators and ESD (electrostatic discharge) protection circuits. Besides this, due to its low gate capacitance, it can also be used in pulse processing and high frequency circuits.
In addition to this, due to its high Reliability Qualification , it is also used in automotive and medical applications where reliability is highly important. The BUK9M34-100EX offers a minimum static and dynamic drain-to-source resistance for low power dissipation, making it an ideal choice for applications that require high efficiency.
Conclusion
The BUK9M34-100EX is a reliable, efficient and accurate MOSFET that is suitable for a wide range of applications. With its high reliability rating and low on-state resistance (RDSon), it is the ideal choice for applications that require maximum current with minimum power loss and low gate capacitance. The BUK9M34-100EX is an excellent choice for power supply controllers, inverters, converters, audio amplifiers and switching regulators, as well as automotive and medical applications.
The specific data is subject to PDF, and the above content is for reference
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