BUK9M35-80EX

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Introduction to BUK9M35-80EX application field and working principle

BUK9M35-80EX is an enhancement-mode power MOSFET from NXP Semiconductors. It is specially designed to operate at higher switching frequency and consume less power. This device is housed in a P-DSO-6-40 package and is ideal for use in medium power switching applications. It has a low on-resistance chip with a voltage range of 4.5V to 80V. The recommended operation junction temperature is -55°C to +125°C and the maximum storage temperature is -65°C to +150°C.

Application Fields of BUK9M35-80EX

BUK9M35-80EX is suitable for applications in the following areas:

• Switched mode power supplies
• High frequency DC-DC and AC-DC converters
• Optoisolators
• Motor drives
• Laser drivers
• Printer head drivers
• LED drivers
• DC motors
• Solar energy systems
• HVAC systems

Working Principle of BUK9M35-80EX

The working principle of a MOSFET is based on the current controlling. When a gate voltage is applied, it controls the channel between the drain and source. The drain current is due to the current flow from the source to drain from the channel. The applied gate voltage will control the channel width, thus controlling the drain current.

The current-voltage relationship (the transfer characteristic) of BUK9M35-80EX MOSFET is described by a set of high-order polynomials. It has an open drain configuration and is an enhancement type MOSFET. When a gate voltage is applied to the device, it modulates the N-channel between the source and drain. The size of the N-channel is controlled by the gate voltage, hence, controlling the drain current.

This device uses the level shifting technique to reduce the on-resistance. It operates in the frequency range of 10MHz to 100MHz. It is also well protected against electrostatic discharge. It has temperature resistant characteristics, excellent latch up resistance and immunity against noise.

In addition to its advantages, the BUK9M35-80EX also has some limitations. It is not suitable for high-current applications due to its low breakdown voltage. Its response time is slow and hence cannot be used for high-speed switching applications. Furthermore, It has a long recovery time and its dynamic performance is also not very good.

Conclusion

In conclusion, the BUK9M35-80EX MOSFET is a versatile device that can be used for various applications, such as switched mode power supplies, high frequency DC-DC and AC-DC converters, optoisolators, motor drives, laser drivers, printer head drivers, LED drivers, DC motors, solar energy system, and HVAC systems. It has stable electrical characteristics and immunity against electrostatic discharge. However, it has some limitations, such as slow response time and poor dynamic performance.

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