Allicdata Part #: | BUK9MRR-55PGG/A,51-ND |
Manufacturer Part#: |
BUK9MRR-55PGG/A,51 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | 55V N CH TRENCHFET |
More Detail: | |
DataSheet: | BUK9MRR-55PGG/A,51 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Last Time Buy |
FET Type: | -- |
Technology: | -- |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drive Voltage (Max Rds On, Min Rds On): | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
Vgs (Max): | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | -- |
Supplier Device Package: | -- |
Package / Case: | -- |
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The BUK9MRR-55PGG/A,51 is a single n-channel MOSFET transistor used in a variety of applications. It is also referred to as a static mode Field Effect Transistor (FET), coming from the full name MOSFET. It\'s main purpose is for general purpose switching applications.
MOSFET transistors are more efficient than BJTs, or bipolar junction transistors, in most cases. They switch faster and offer better performance, but can also easily become damaged with inverter problems or from over voltage or current. The BUK9MRR-55PGG/A,51 transistor is often used in applications such as switching, amplification and voltage regulation. It is also popular as a discrete component in amplifiers and other power applications.
The BUK9MRR-55PGG/A,51 transistor has an on state voltage of 40V and a total power output of 220W. It has a built-in diode, which is beneficial in controlling the drain current and increasing the life of the circuit. This transistor also has a very high scorching protection voltage and a package size of 51x67mm.
There are many benefits to using the BUK9MRR-55PGG/A,51 transistor, including its high speed and low on resistance which allow for better circuit performance. It also has an easy thermal design and low noise, as well as EMI reduction capability. Other features include low standby current and good ESD performance.
The working principle of MOSFETs is based on the change of conductivity when a voltage is applied to the gate terminal. When no voltage is applied, the channel between the source and drain is charged with electrons, and the MOSFET is off. When a voltage is applied, the inertia of the electrons is reduced and the current is allowed to flow.
The BUK9MRR-55PGG/A,51 provides a very reliable and efficient method of controlling and manipulating the flow of energy in applications. It can be used in a wide variety of applications, from computer and telecommunications systems, to automotive systems, motor controllers and more. It is an excellent choice for applications where fast switching and low power consumption are essential.
The BUK9MRR-55PGG/A,51 is a great choice for applications that require a powerful and reliable single n-channel MOSFET transistor. Its robust performance, low power consumption and fast switching capabilities make it an ideal choice for many applications. It is a convenient, reliable and cost-effective way to control the flow of energy in various applications.
The specific data is subject to PDF, and the above content is for reference
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