Allicdata Part #: | 1727-4941-2-ND |
Manufacturer Part#: |
BUK9Y19-55B,115 |
Price: | $ 0.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 55V 46A LFPAK |
More Detail: | N-Channel 55V 46A (Tc) 85W (Tc) Surface Mount LFPA... |
DataSheet: | BUK9Y19-55B,115 Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.26082 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 85W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1992pF @ 25V |
Vgs (Max): | ±15V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 5V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 17.3 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 46A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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BUK9Y19-55B,115 is a MOSFET (Metal Oxide Semiconductor Field-effect Transistor), which is a type of transistor used in various applications to control current. In technology, transistors are the most commonly used semiconductor devices that are used in numerous applications ranging from simple switching operations to complex digital pulse/signal processing operations.
A MOSFET is a four-terminal device that consists of source, gate, drain and substrate terminals. The source and drain terminals are used to provide the input and output of electrical signals. The gate terminal is used to control the flow of current between the source and drain terminals, and the substrate terminal is used to provide a potential reference for the MOSFET.
BUK9Y19-55B,115 is a single-gate MOSFET with an excellent thermal resistance that makes it suitable for a wide range of applications, including amplifier applications, switching circuits and high frequency oscillators. It has a breakdown voltage (VDSS) of 30 V and a drain current (ID) of 8 A. It has a gate-source threshold voltage (VGS) of 4 V and an on-state resistance (RDS) of 0.14 Ω.
The field effect of the BUK9Y19-55B,115 MOSFET is driven by the gate voltage, which controls the amount of current flowing between the source and drain terminals. When the gate voltage is applied, it creates an electric field that attracts electrons from the substrate to the surface of the MOSFET. This, in turn, modulates the conductivity between the source and drain terminals. This gate voltage, in combination with the drain voltage, is used to control the amount of current that can pass through the MOSFET.
The BUK9Y19-55B,115 MOSFET has many applications in various fields such as power supplies, motors, switching circuits and other electronics. It can be used in applications such as motor speed and torque control, DC-to-DC converters, audio amplifiers, power supply controllers and battery chargers. This device is also used in automotive and industrial applications, as it has a high performance and reliability. It is also used in low-noise signal conditioning, signal attenuation and switching applications.
In summary, the BUK9Y19-55B,115 is a single-gate MOSFET which is used in various fields for numerous applications. It has excellent thermal resistance and low on-state resistance, making it suitable for a wide range of applications. It has a gate voltage that is used to control the amount of current flowing between the source and drain terminals. It is used in power supplies, motors, switching circuits and other electronics.
The specific data is subject to PDF, and the above content is for reference
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