BUK9Y25-80E,115 Discrete Semiconductor Products |
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| Allicdata Part #: | 1727-1124-2-ND |
| Manufacturer Part#: |
BUK9Y25-80E,115 |
| Price: | $ 0.25 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | MOSFET N-CH 80V LFPAK |
| More Detail: | N-Channel 80V 37A (Tc) 95W (Tc) Surface Mount LFPA... |
| DataSheet: |  BUK9Y25-80E,115 Datasheet/PDF |
| Quantity: | 1000 |
| 1500 +: | $ 0.22245 |
Specifications
| Vgs(th) (Max) @ Id: | 2.1V @ 1mA |
| Package / Case: | SC-100, SOT-669, 4-LFPAK |
| Supplier Device Package: | LFPAK56, Power-SO8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 95W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2703pF @ 25V |
| Vgs (Max): | ±10V |
| Gate Charge (Qg) (Max) @ Vgs: | 17.1nC @ 5V |
| Series: | Automotive, AEC-Q101 |
| Rds On (Max) @ Id, Vgs: | 27 mOhm @ 10A, 5V |
| Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 37A (Tc) |
| Drain to Source Voltage (Vdss): | 80V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Transistors - FETs, MOSFETs - Single - BUK9Y25-80E, 115 application field and working principleThe BUK9Y25-80E, 115 Silicon FET (Field Effect Transistor) is a type of transistor belonging to a group known as an FET, which stands for field-effect transistor. It is a type of transistor which operates by controlling the electric field between two terminals, the source and drain.The BUK9Y25-80E, 115 is a single MOSFET (metal-oxide-semiconductor field-effect transistor), a type of FET which is commonly used in integrated circuits. This particular transistor has a drain-source voltage rating of 80V and 175A, with a rDS (on) resistance of 0.00115Ω. It also features a continuous voltage limit of 80V and a pulsed current limit of 400A.The BUK9Y25-80E, 115 was designed to be used as a power switch in a range of applications, including: power supply and motor control circuits, industrial automation, lighting control systems, and AC to DC converter circuitry.MOSFETs are commonly used for switching applications due to their low conduction losses and high switching speeds, making them an ideal choice for many applications. Additionally, they are relatively immune to magnetic fields, which makes them suited for use in high-magnetism environments such as those found in industrial automation, motors, and power supplies.In terms of its working principle, the BUK9Y25-80E, 115 is a depletion-mode FET, meaning it is initially in an "on" state and is only turned "off" when a negative gate-source voltage is applied. To "turn on" the transistor, a positive gateway-source voltage is required. The positive voltage causes an inversion layer to form in the semiconductor material, which is known as the depletion layer. This layer prevents any further current from flowing through the transistor, effectively turning it "off".By controlling the gate-source voltage, the BUK9Y25-80E, 115 can be quickly switched between its "on" and "off" states. This type of switching operation makes it ideal for use in power supply and motor control circuits, as well as in other applications where an on/off type of operation is required.In summary, the BUK9Y25-80E, 115 is a single MOSFET with a drain-source voltage rating of 80V and 175A, and a rDS (on) resistance of 0.00115Ω. It can be used for switching applications in industrial automation, lighting control systems, power supply, and other automation and DC/AC converter applications where it is required to switch between a "on" and "off" states quickly. Its depletion-mode FET operation makes it energy efficient and capable of switching between states in a short amount of time.
The specific data is subject to PDF, and the above content is for reference
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