BUK9Y30-75B/C2,115

BUK9Y30-75B/C2,115 is a single high side, monolithic, low side, and open drain N-channel MOSFET module. It is designed and manufactured by Infineon Technologies. The driving voltage range of the module is 6 to 36 volts, and the output current is up to 2 A. This type of MOSFET can be used in a variety of applications and is suitable for automotive, medical, and telecommunications applications. Additionally, the MOSFET can be used in power switching, digital control, and power conversion applications.

Application Field

The BUK9Y30-75B/C2,115 MOSFET module can be used in power switching applications where high performance and low gate capacitance is required. The module is ideal for use in applications such as automotive and medical equipment, telecommunications and power conversion, where power switching is necessary. Additionally, the MOSFET can be used in applications such as load switch and reset, automotive dashboard, energy management, and power illumination. These MOSFETS can be connected in parallel to provide higher output current and can be used in high reliability automotive applications or medical equipment.

Working Principle

The BUK9Y30-75B/C2,115 MOSFET module works on the principle of field effect transistor (FET). The MOSFETs are also known as metal oxide semiconductor FETs, and are built using an insulated gate. The gate is responsible for controlling the voltage applied to the channel of the FET, thus controlling the device. The MOSFETs can be used as transistors or switches, depending on the voltage applied to the gate. When the voltage on the gate is increased, the current through the channel increases and the transistor is said to be in the “on” state. When the voltage on the gate is decreased, the current through the channel decreases and the transistor is said to be in the “off” state.

Conclusion

The BUK9Y30-75B/C2,115 MOSFET module is a single high side, monolithic, low side, and open drain N-channel MOSFET module. It is designed and manufactured by Infineon Technologies, and is ideal for use in power switching applications, where high performance and low gate capacitance is required. The module is suitable for use in automotive, medical, and telecommunications applications and in power switching, digital control, and power conversion applications. The BUK9Y30-75B/C2,115 MOSFET module works on the principle of field effect transistor, where the Gate controls the voltage applied to the channel of the FET, thus controlling the device.