BUK9Y65-100E,115 Discrete Semiconductor Products

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A BUK9Y65-100E,115 Transistor is a highly efficient, low power consumption Field Effect Transistor (FET) used for switching and amplification in a range of applications. Its maximum power dissipation is 40W, and the maximum drain current is 32A. The FET has an on state resistance of 1 ohms, making it an ideal choice for applications that require low power consumption while still providing high-precision switching.The BUK9Y65-100E,115 Transistor is a single, N-channel enhancement-mode device, meaning that it can be easily switched on and off by applying a voltage to the gate terminal. When the gate voltage is greater than the threshold voltage, the channel between the source and drain terminals opens up, allowing current to flow through the channel. This is known as the “on” state of the transistor. When the gate voltage becomes equal to or lower than the threshold voltage, the channel closes, preventing current from flowing through it. This is the “off” state of the transistor.The BUK9Y65-100E,115 Transistor makes it easy to control the current flowing through the device, allowing designers to optimize performance in their applications. It also has a lower gate capacitance than other transistors of its kind, making it more resistant to interference and more reliable under extreme conditions.The BUK9Y65-100E,115 Transistor is used in a wide range of applications, including high current speed control, pulse step motor drive systems, Bluetooth and mobile device power supply, high frequency switching, power regulators and motor control circuits, and power supply monitoring systems. Because of its low power dissipation and high efficiency, it is also a popular choice for small form factor applications, like medical devices and wearable electronics.The BUK9Y65-100E,115 Transistor excels at high speed switching and controlling, which makes it ideal for applications that rely on precision and accuracy. Its low gate capacitance and fast switching speeds make it ideal for controlling the speed of data transfer, such as with Bluetooth and mobile device power supplies.In summary, the BUK9Y65-100E,115 Transistor is a highly efficient Field Effect Transistor that is suitable for a wide range of applications, due to its low power consumption, high efficiency, and high speed switching. Its single N-channel enhancement mode feature makes it an ideal choice for applications that require precision switching, and its low gate capacitance makes it more resistant to interference. As such, it is a popular choice in high current speed control, pulse step motor drive systems, Bluetooth and mobile device power supply, high frequency switching, power regulators and motor control circuits, and power supply monitoring systems.

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