Allicdata Part #: | CSD10060G-ND |
Manufacturer Part#: |
CSD10060G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Cree/Wolfspeed |
Short Description: | DIODE SCHOTTKY 600V 16.5A TO263 |
More Detail: | Diode Silicon Carbide Schottky 600V 16.5A Surface ... |
DataSheet: | CSD10060G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 16.5A |
Voltage - Forward (Vf) (Max) @ If: | 1.8V @ 10A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0ns |
Current - Reverse Leakage @ Vr: | 200µA @ 600V |
Capacitance @ Vr, F: | 550pF @ 0V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263-2 |
Operating Temperature - Junction: | -55°C ~ 175°C |
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CSD10060G application field and working principleA diode is a two-terminal electronic component having a nonlinear current-voltage characteristic, which is traditionally used in electronic circuits as a rectifying device to limit current flow in one direction. Diodes are also used in many other applications, including voltage clamping and as frequency mixers for radio frequency signals. The CSD10060G is an example of a diode specifically built to enable high-current, high-voltage applications.
The CSD10060G is a high-performance double-diffused metal-oxide semiconductor (DMOS) rectifier. This device is designed to handle a high current of up to 60 Amps and a maximum peak reverse voltage of 600 volts. This makes it ideal for power conditioning applications such as battery chargers, inverters, and buck converters. Besides its high efficiency, it is also suitable for use at higher frequencies as it has an extremely low forward voltage drop and a fast reverse recovery time.
The working principle of the CSD10060G can be explained by its construction. The device consists of two silicon wafers bonded together. One wafer hosts the P-type and N-type cells, while the other wafer hosts the control electrodes. The control electrodes are connected to the gate of the transistor, which acts as the controlling element. When a positive voltage is applied to the gate of the transistor, the P-type and N-type cells form a junction, which allows current to flow. However, if the voltage on the gate is negative, the junction does not form, thus, current does not flow through the device.
The distinct advantage of the CSD10060G over other rectifiers is that it has a very low voltage drop and hence good efficiency. This means that the device can provide maximum current output from a given input voltage. The device’s fast reverse recovery time, exceeding 500 ns, enables it to handle high-frequency switching applications. Its high thermal conductivity of 2.8W/ºC helps keep temperature rise within the safe operating range.
In summary, the CSD10060G is a high-performance rectifier suitable for demanding power conditioning applications, such as inverters, battery chargers and buck converters. Its low forward voltage drop, fast reverse recovery time and high thermal conductivity make it an ideal choice for use in high-current, high-voltage applications.
The specific data is subject to PDF, and the above content is for reference
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