CSD19502Q5BT

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The CSD19502Q5BT is a power field-effect transistor (FET) that is becoming increasingly popular among electronic engineers and hobbyists alike. It is a power MOSFET (metal-oxide semiconductor field-effect transistor), and it is commonly used in DC and low-frequency AC applications. This device is able to provide superior power performance while also maintaining relatively low on-state resistance. With its robust design and convenience, it is becoming a go-to choice for many power applications.

This device has an N-channel topology, meaning it has a source, gate, and drain. The source is connected to the negative terminal of the power supply, and the drain is connected to the positive terminal of the power supply. The gate is isolated from the rest of the device and requires a positive voltage to be applied to it in order for the FET to operate. When the correct gate voltage is applied, the FET will turn on and allow current to flow from the source to the drain.

The gate voltage required to turn on this FET is relatively low, making it quite convenient to use in most applications. It can handle a peak drain-source voltage of up to 40 V and a continuous drain-source voltage of 25 V without any problems. The maximum continuous current it can handle is 132 A and the maximum pulse current is 195 A. The maximum junction temperature this device can handle is up to 175 degrees Celsius.

The CSD19502Q5BT is ideal for use in a variety of different applications such as switching power supplies, DC motor drivers, and inductive loads. In inductive-load applications, this FET can quickly and safely act as a switch to provide current to the inductor and also protect it from damage due to an inductive kickback. It is also quite useful for switched-mode power supplies, where it can operate at high frequencies to provide superior performance, particularly with its low on-state resistance.

In addition to its various applications, the CSD19502Q5BT is also extremely reliable. It has a maximum drain-to-source breakdown voltage of 40 V and a maximum avalanche energy of 45 mJ. This, combined with its robust design, make it an ideal choice for use in high-reliability and automotive applications. This FET also has a very low RDS(ON) of 0.14 Ω, making it an excellent choice for use at higher frequencies and in low-voltage applications.

The CSD19502Q5BT is an incredibly versatile power FET that is quickly becoming a popular choice for many applications. It is capable of providing superior power performance and is highly reliable, making it ideal for use in high-reliability and automotive applications. It is also very low on-state resistance and wide variety of gate voltages, making it ideal for use in DC and low-frequency AC applications.

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