CSD18502KCS

Series:	NexFET™
Packaging:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40V
Current - Continuous Drain (Id) @ 25°C:	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	2.9 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:	2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	62nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	4680pF @ 20V
FET Feature:	--
Power Dissipation (Max):	259W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220-3
Package / Case:	TO-220-3

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CSD18502KCS is an enhancement-type n-channel MOSFET (metal-oxide-semiconductor field-effect transistor) developed by Texas Instruments. It is one of the most widely used MOSFETs due to its high power handling capability, low on-resistance, high switching speed, and low gate charging. It has applications in a variety of fields, including power switching, motor control, and amplifier design. In this article, we will discuss the application fields and working principle of CSD18502KCS.The CSD18502KCS is a robust and reliable power MOSFET that is available in a variety of packages, including TO-220, DPAK, and D2PAK. It has a maximum drain-source voltage rating of 155V, a maximum drain current of 160A, and a maximum gate threshold voltage of 2.0V. Its high power handling capability and low gate charging make it an ideal choice for high-current applications such as power switching, motor control, and amplifier design.The CSD18502KCS is capable of switching high currents at high frequencies, making it suitable for applications such as motor control and amplifier design where fast switching speed is desired. It can handle up to 160A of continuous drain current and is capable of handling up to 100V drain-source voltages. Additionally, the device has a low gate charging, meaning that it can be switched rapidly with minimal voltage overshoot and ringing.The CSD18502KCS operates on the principle of enhancement-type MOSFETs. An enhancement MOSFET is constructed with a p-channel region between the source and drain, and an n-channel region between the drain and the gate. When a positive voltage is applied to the gate, electrons are attracted to the gate and the p-channel region becomes "pinched off". This reduces the resistance between the source and drain, allowing current to flow. As the voltage on the gate increases, the resistance between the source and the drain decreases, allowing more current to pass through the device.In summary, the CSD18502KCS is an enhancement-type n-channel MOSFET developed by Texas Instruments. It is widely used in high-current applications such as power switching, motor control, and amplifier design due to its high power handling capability, low on-resistance, and high switching speed. The device works on the principle of an enhancement-type MOSFET, where a positive voltage applied to the gate attracts electrons and reduces the resistance between the source and the drain.

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