Allicdata Part #: | 296-36456-5-ND |
Manufacturer Part#: |
CSD18537NKCS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 60V 50A TO220-3 |
More Detail: | N-Channel 60V 50A (Tc) 94W (Tc) Through Hole TO-22... |
DataSheet: | CSD18537NKCS Datasheet/PDF |
Quantity: | 645 |
Series: | NexFET™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1480pF @ 30V |
FET Feature: | -- |
Power Dissipation (Max): | 94W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220-3 |
Package / Case: | TO-220-3 |
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Transistors - FETs, MOSFETs - Single
CSD18537NKCS belongs to the single MOSFET family. It is a complementary low-voltage MOSFET which is developed on the basis of the latest process technology. CSD18537NKCS features very low on-resistance, fast switching and good thermal performance, making it suitable for various applications such as portable electronics and telecommunication systems, where power efficiency and miniaturization are highly expected.
The working principle of CSD18537NKCS is that when an input voltage greater than the gate threshold voltage Igth is applied, a conductive channel is created between the drain and the source. As a result, the current (ID) flowing between the drain and the source is controlled by the input voltage. CSD18537NKCS also has two enhancement levels, forming a series of devices with different threshold gate voltages and different continuous drain-source current.
CSD18537NKCS can be widely used in various portable and power saving applications. In portable equipment, it can be used as a switch to reduce power usage of circuitry and extend battery life, as well as in power saving circuits to provide reliable current control in all operating environments. In modern telecommunication systems, it can be employed as a low-voltage switch to control the number of RF signals and transfer data efficiently. In addition, CSD18537NKCS is featured with a high breakdown voltage, making itself suitable for various operation temperatures and environmental conditions.
Moreover, CSD18537NKCS has very good thermal performance and its reduced die size makes it the best choice for miniaturizing electronic products. It also has a low gate threshold voltage for high-frequency switching. As a result, CSD18537NKCS is capable of generating higher power output and switching at a very low voltage.
Overall, CSD18537NKCS is an ideal device for various applications, featuring ultra-low on-resistance and good thermal performance. Its fast switching, good thermal performance and low gate threshold voltage are perfect for building efficient, miniaturized and high-performance electronic devices.
The specific data is subject to PDF, and the above content is for reference
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