CSD18510Q5B

Series:	NexFET™
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40V
Current - Continuous Drain (Id) @ 25°C:	300A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	0.96 mOhm @ 32A, 10V
Vgs(th) (Max) @ Id:	2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	153nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	11400pF @ 20V
FET Feature:	--
Power Dissipation (Max):	156W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-VSON-CLIP (5x6)
Package / Case:	8-PowerTDFN

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CSD18510Q5B Application Field and Working Principle

The N-channel CSD18510Q5B is a transistor of the super-junction type, based on the MOSFET structure and developed by STMicroelectronics. It is designed for use in high power applications and is available in a high power, 5x6mm, surface-mount package. The device is also available with a variety of ratings and voltage requirements.The CSD18510Q5B is most commonly used in server and high-end networking products, such as switches, routers, and other high power devices. The device is also suitable for communications equipment, industrial and automotive applications, and renewable energy systems.

Applications

The CSD18510Q5B is a high power switching transistor, suitable for use in a variety of applications requiring fast switching, high accuracy and high power efficiency. The device is ideal for use in switching power supply applications and for controlling inverters. The device is also suitable for use in DC/DC conversion, current-mode control circuits, Class-D audio amplifiers, and load switch applications.

Working Principle

The CSD18510Q5B is a super-junction type MOSFET, which means that the device is constructed from multiple layers of alternating n- and p-type dopants. This type of structure creates a highly efficient transistor, with low on-state resistance (R DS(on) ), fast switching speed, and high breakdown voltage.The CSD18510Q5B has an integrated protection circuit, which prevents excessive current flow and ensures fault protection. The device is also rated for an operating temperature range of -40°C to 125°C, making it ideal for use in a wide range of applications.

Conclusion

The CSD18510Q5B is a high power switching transistor, designed for use in a variety of applications. The device is suitable for use in switching power supply applications, for controlling inverters, for DC/DC conversion, current-mode control circuits, Class-D audio amplifiers, and load switch applications. The CSD18510Q5B features a super-junction structure, an integrated protection circuit, and an extended operating temperature range. This makes the device ideal for use in high power, high accuracy, and high power efficiency applications.

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