CSD19506KTT Discrete Semiconductor Products |
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Allicdata Part #: | 296-49604-2-ND |
Manufacturer Part#: |
CSD19506KTT |
Price: | $ 2.24 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 80V 200A DDPAK-3 |
More Detail: | N-Channel 80V 200A (Ta) 375W (Tc) Surface Mount DD... |
DataSheet: | CSD19506KTT Datasheet/PDF |
Quantity: | 1000 |
500 +: | $ 2.03612 |
1000 +: | $ 1.71721 |
Series: | NexFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 80V |
Current - Continuous Drain (Id) @ 25°C: | 200A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 2.3 mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: | 3.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 156nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 12200pF @ 40V |
FET Feature: | -- |
Power Dissipation (Max): | 375W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DDPAK/TO-263-3 |
Package / Case: | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
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The CSD19506KTT is a N-Channel Enhancement Mode Field Effect Transistor (FET) produced by ON Semiconductor, which is one of the most reliable and renowned providers of discrete semiconductor components and solutions for the electronic industry. The device is constructed using the latest technology, making it capable of delivering high performance in a variety of applications.
The CSD19506KTT device is a promotion or power MOSFET intended for high current switching applications. It is designed to handle loads up to 5.2A and supply voltages up to 30V. It is also capable of withstanding high temperature operating conditions and can safely operate at temperatures up to 175°C. It features an integrated logic-level gate which helps provide fast switching times.
The device has an ID (drain-source) of 5.2A and a VDS rating of 30V. It has a low gate charge, which makes it be suitable for high frequency switching applications. It features a low RDS(on) of 470 mOhms, which ensures a high current efficiency and allows for low losses. The device also includes a maximum drain-source capacitance of 3.1nF.
The CSD19506KTT is available in a TO-252-5L (DPAK) surface mount package, making it an ideal solution for applications where size and heat management are critical factors. It has a gate-source capacitance of 1.6nF and an output capacitance of 500pF.
Due to its high current ratings, the CSD19506KTT is typically used in power switching applications, such as DC/DC converters, power inverters, switching power supplies, power management, and automotive electronics. It can also be used in audio amplifiers, motor control, battery packs, and industrial control systems.
The CSD19506KTT works on a principle of allowing current to flow freely through the semiconductor channel when there is an applied voltage to the gate terminal. This voltage can be controlled by using external logic. The device operates in enhancement mode, where the source-drain current increases with an increase in gate voltage.
The CSD19506KTT is a low-cost, compact, and reliable solution for high current switching applications and can be used in a variety of industries. It offers high levels of efficiency, fast switching times, and low losses. It is available in a TO-252-5L package and is suitable for both surface mount and through-hole applications.
The specific data is subject to PDF, and the above content is for reference
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