Allicdata Part #: | 296-35548-2-ND |
Manufacturer Part#: |
CSD17313Q2Q1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 30V 5A 6SON |
More Detail: | N-Channel 30V 5A (Tc) 2.3W (Ta) Surface Mount 6-WS... |
DataSheet: | CSD17313Q2Q1 Datasheet/PDF |
Quantity: | 1000 |
Series: | Automotive, AEC-Q100, NexFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 3V, 8V |
Rds On (Max) @ Id, Vgs: | 30 mOhm @ 4A, 8V |
Vgs(th) (Max) @ Id: | 1.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 2.7nC @ 4.5V |
Vgs (Max): | +10V, -8V |
Input Capacitance (Ciss) (Max) @ Vds: | 340pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 2.3W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 6-WSON (2x2) |
Package / Case: | 6-WDFN Exposed Pad |
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The CSD17313Q2Q1 is a novel type of discrete device that offers substantial improvements to the utilization of power in electronic circuits.
It is a type of Field Effect Transistor (FET) that is characterized by its single channel design. It was first developed in the 1970\'s, and has since become a crucial component in modern electronic systems. This transistor offers excellent performance, particularly in high voltage and high current applications. It makes use of a unique electrical architecture that allows it to handle large operating voltages and currents more effectively than competing components.
The CSD17313Q2Q1 is a depletion mode MOSFET, meaning it requires a negative gate-source voltage to turn on. This transistor uses an N-type channel, which reduces its on-state resistance and offers better control of current. It also facilitates dynamic behavior, allowing the transistor to automatically adjust its operating parameters based on the power or frequency of the signal it is carrying. This feature makes it especially well-suited for switching applications.
Due to its low on-state resistance, these devices are often used for DC/DC converters and general-purpose power switching. They are also commonly used for Power Management, such as controlling the power flow in battery management application circuits, solar arrays, and other power supply systems. As such, they are often found in consumer electronics, industrial systems, and automotive electronics.
Another key attribute of the CSD17313Q2Q1 is its high power dissipation capability, which is the ability to dissipate more heat than conventional discrete transistors. This helps increase the efficiency of the power supply systems in which these devices are used. By combining this device with other high-power components, systems can achieve better power delivery and longer operational life.
The CSD17313Q2Q1 is a highly efficient and reliable device, offering improved performance in applications requiring large operating voltages and currents. Its single channel design provides excellent control of the output current, and the unique electrical architecture allows it to handle high gains and large voltages without degrading its performance. The device also has excellent thermal and power dissipation capabilities. All of these attributes make the CSD17313Q2Q1 a popular choice for demanding power and control applications.
The specific data is subject to PDF, and the above content is for reference
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