Allicdata Part #: | 296-28437-2-ND |
Manufacturer Part#: |
CSD17501Q5A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 30V 100A 8SON |
More Detail: | N-Channel 30V 100A (Tc) 3.2W (Ta) Surface Mount 8-... |
DataSheet: | CSD17501Q5A Datasheet/PDF |
Quantity: | 2500 |
Series: | NexFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 2.9 mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 1.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2630pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 3.2W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-VSONP (5x6) |
Package / Case: | 8-PowerTDFN |
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CSD17501Q5A is a type of field effect transistor, more specifically a metal oxide semiconductor field-effect transistor (MOSFET). It is a single MOSFET, meaning that the substrate, source, and drain electrodes are all on one piece of semiconductor crystal. MOSFETs are commonly used as switching devices because a typically small change in voltage can cause a large change in current. This makes them ideal as amplifiers and digital switches.
The CSD17501Q5A combines extremely fast switching times, small physical size and easy design features, making it suitable for a variety of applications. Its low switching losses make it particularly suitable for high speed switching applications. The CSD17501Q5A\'s voltage ratings and widely accessible, small heating and cooling rates offer comfort and cost savings for high temperature applications, including those in airborne and mobile equipment. Its low gate charge and very low input capacitance make it suitable for switching applications in which speed and frequency of operation is critical.
The working principle behind the CSD17501Q5A can be seen by considering the basic structure of a MOSFET. The semiconductor is doped so that a region of N- material functions as the source and a region of P- material functions as the drain. The channel between the source and drain regions is controlled by the gate, which is also P- doped. A potential difference created by a voltage at the gate and source results in the formation of a depletion layer in the channel, meaning current does not flow and the device is in the OFF position. When the potential difference is reversed current can flow, and the device is ON.
The CSD17501Q5A has a number of useful properties within its applications. Its high operating temperature ratings and low heating and cooling rates make it suitable for high temperature applications. It also has a low gate charge and very low input capacitance, which makes it ideal for switching applications. Additionally it has low switching losses, which makes it suitable for high speed switching applications.
Its many advantages make the CSD17501Q5A an ideal choice when searching for a MOSFET solution. It is suitable for fast switching applications, high temperature applications, and even applications that require small heating and cooling rates. With its low switching losses and input capacitance, it is an ideal choice for a variety of digital applications. All of these factors lead to a robust, yet easily designed FET that can be used in almost any application.
The specific data is subject to PDF, and the above content is for reference
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