Allicdata Part #: | 296-48513-2-ND |
Manufacturer Part#: |
CSD18503Q5AT |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 40V 100A 8VSON |
More Detail: | N-Channel 40V 100A (Tc) 3.1W (Ta), 120W (Tc) Surfa... |
DataSheet: | CSD18503Q5AT Datasheet/PDF |
Quantity: | 750 |
Specifications
Series: | NexFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 4.3 mOhm @ 22A, 10V |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2640pF @ 20V |
FET Feature: | -- |
Power Dissipation (Max): | 3.1W (Ta), 120W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-VSONP (5x6) |
Package / Case: | 8-PowerTDFN |
Description
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CSD18503Q5AT is a type of n-channel enhancement mode field effect transistor, also known as an E-Mode MOSFET. It is a single discrete component, meaning it is an independent device made in a unified package and consists of one transistor. This MOSFET is typically used in a voltage range of 6V to 40V and a maximum operating temperature of 175°C. Its average on-resistance is 0.0028 ohms in a typical mode and its continuous drain current ranges from 5 amps to 28 amps per channel. Furthermore, this n-channel MOSFET offers a low gate-to-drain feedback capacitance of only 60 pF.An E-Mode MOSFET is basically an arrangement of a base, an emitter, and a collector. Electrons flow from the emitter to the base, and then through the channel which is between the source and drain, and finally to the collector. This arrangement is set to allow the E-Mode MOSFET to act as a voltage-controlled switch.One application where CSD18503Q5AT can be used is as a switch in a power distribution system. When carrying out any power distribution system, the need arises to switch components on and off. Thus, the CSD18503Q5AT is a suitable candidate for this purpose. It is able to control the flow of electricity in the circuit with great accuracy, due to its very low on-resistance. Furthermore, this MOSFET does not require much of a current for its own operation, which minimizes the total system power dissipation.CSD18503Q5AT can also be used in an amplifier. An amplifier amplifies or increases the power or voltage of an input signal. The peak-to-peak voltage of the input signal is increased by the amplifier. With the CSD18503Q5AT, the amplifier can be easily switched between different gain stages by simply adjusting the applied voltages on the gate and source of the transistor. This makes it possible to amplify larger signals without affecting the response time of the amplifier.Finally, the CSD18503Q5AT can be utilized as a motor controller. As the name suggests, motor controllers are devices used to control the operation of a motor. They control the speed, torque and direction of the motor. A CSD18503Q5AT can be used in such situations where a motor needs to be turned on and off quickly, due to its very low switching times. This MOSFET can also be used for safety purpose, as it is able to shut off the power to a motor in case of a fault.In conclusion, the CSD18503Q5AT n-channel enhancement mode MOSFET is a voltage-controlled switch suitable for a variety of applications. It offers excellent low on-resistance and low gate-to-drain feedback capacitance, making it able to handle high currents. It is also very suitable for motor controllers, power distributors and amplifiers.
The specific data is subject to PDF, and the above content is for reference
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