CSD17575Q3T Allicdata Electronics
Allicdata Part #:

296-37961-2-ND

Manufacturer Part#:

CSD17575Q3T

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Texas Instruments
Short Description: MOSFET N-CH 30V 60A 8VSON
More Detail: N-Channel 30V 60A (Ta) 2.8W (Ta), 108W (Tc) Surfac...
DataSheet: CSD17575Q3T datasheetCSD17575Q3T Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-VSONP (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.8W (Ta), 108W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4420pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Series: NexFET™
Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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CSD17575Q3T is a type of FET (Field Effect Transistor) from Texas Instruments. It is a P-channel, depletion-mode, MOSFET (metal-oxide-semiconductor field-effect transistor) designed for use in low-side switching, polar logic and audio circuits. Its features include low on-resistance, fast switching time and low gate drive, making it ideal for use in high-frequency applications and audio switching.

The CSD17575Q3T is based on the same technology as other FETs and MOSFETs. It consists of a p-channel FET (field effect transistor) and a gate electrode, which is the control element that creates an electric field between the source and the drain, allowing current to flow. When a voltage is applied to the gate, a conducting path is created between the source and the drain, allowing current to flow. When the gate voltage is removed, the path is cut off and current can no longer flow.

The CSD17575Q3T has a low on-resistance (RDSon) of 75 mOhm, making it able to source and sink higher currents than other FETs and MOSFETs. It is capable of handling up to 20A of continuous current and up to 100A of pulsed current with a low gate-source voltage of 1.8V and a gate-drain voltage of 1.5V. It has a very fast switching time of 10 nanoseconds and can handle frequencies up to 20MHz. It has a low gate capacitance of 0.7pF and a maximum operating temperature of 125°C.

The CSD17575Q3T is used in a wide variety of applications, including automotive, industrial and consumer electronics. It is commonly used in low side switching, logic level translator circuits and audio switching. It is also used in DC-DC converters, amplifiers, and power switches.

In automotive applications, the CSD17575Q3T is used in a variety of circuits, including power switches, voltage level shifters, power converters and audio switching. It is ideal for automotive applications due to its fast switching time, low on-resistance, and low gate drive.

In industrial applications, the CSD17575Q3T is used in a variety of power switching applications, including HVAC, lighting, and motor control. It can also be used in power converters and audio switching. Its low on-resistance, high currents and fast switching time make it ideal for use in industrial applications.

In consumer electronics, the CSD17575Q3T is used in logic-level translator circuits, audio switching, DC-DC converters, amplifiers and many other applications. Its low on-resistance, fast switching time, and low gate capacitance make it ideal for use in consumer electronics applications.

Overall, the CSD17575Q3T is a versatile FET (Field Effect Transistor) suitable for use in many different applications. Its low on-resistance, fast switching time, and low gate capacitance make it ideal for high-frequency applications, automotive, industrial and consumer electronics applications.

The specific data is subject to PDF, and the above content is for reference

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