Allicdata Part #: | 296-37961-2-ND |
Manufacturer Part#: |
CSD17575Q3T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 30V 60A 8VSON |
More Detail: | N-Channel 30V 60A (Ta) 2.8W (Ta), 108W (Tc) Surfac... |
DataSheet: | CSD17575Q3T Datasheet/PDF |
Quantity: | 1000 |
Series: | NexFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 2.3 mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 1.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4420pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 2.8W (Ta), 108W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-VSONP (5x6) |
Package / Case: | 8-PowerTDFN |
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CSD17575Q3T is a type of FET (Field Effect Transistor) from Texas Instruments. It is a P-channel, depletion-mode, MOSFET (metal-oxide-semiconductor field-effect transistor) designed for use in low-side switching, polar logic and audio circuits. Its features include low on-resistance, fast switching time and low gate drive, making it ideal for use in high-frequency applications and audio switching.
The CSD17575Q3T is based on the same technology as other FETs and MOSFETs. It consists of a p-channel FET (field effect transistor) and a gate electrode, which is the control element that creates an electric field between the source and the drain, allowing current to flow. When a voltage is applied to the gate, a conducting path is created between the source and the drain, allowing current to flow. When the gate voltage is removed, the path is cut off and current can no longer flow.
The CSD17575Q3T has a low on-resistance (RDSon) of 75 mOhm, making it able to source and sink higher currents than other FETs and MOSFETs. It is capable of handling up to 20A of continuous current and up to 100A of pulsed current with a low gate-source voltage of 1.8V and a gate-drain voltage of 1.5V. It has a very fast switching time of 10 nanoseconds and can handle frequencies up to 20MHz. It has a low gate capacitance of 0.7pF and a maximum operating temperature of 125°C.
The CSD17575Q3T is used in a wide variety of applications, including automotive, industrial and consumer electronics. It is commonly used in low side switching, logic level translator circuits and audio switching. It is also used in DC-DC converters, amplifiers, and power switches.
In automotive applications, the CSD17575Q3T is used in a variety of circuits, including power switches, voltage level shifters, power converters and audio switching. It is ideal for automotive applications due to its fast switching time, low on-resistance, and low gate drive.
In industrial applications, the CSD17575Q3T is used in a variety of power switching applications, including HVAC, lighting, and motor control. It can also be used in power converters and audio switching. Its low on-resistance, high currents and fast switching time make it ideal for use in industrial applications.
In consumer electronics, the CSD17575Q3T is used in logic-level translator circuits, audio switching, DC-DC converters, amplifiers and many other applications. Its low on-resistance, fast switching time, and low gate capacitance make it ideal for use in consumer electronics applications.
Overall, the CSD17575Q3T is a versatile FET (Field Effect Transistor) suitable for use in many different applications. Its low on-resistance, fast switching time, and low gate capacitance make it ideal for high-frequency applications, automotive, industrial and consumer electronics applications.
The specific data is subject to PDF, and the above content is for reference
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