Allicdata Part #: | 296-47753-2-ND |
Manufacturer Part#: |
CSD16570Q5B |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 25V 100A 8VSON |
More Detail: | N-Channel 25V 100A (Ta) 3.2W (Ta), 195W (Tc) Surfa... |
DataSheet: | CSD16570Q5B Datasheet/PDF |
Quantity: | 1000 |
Series: | NexFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 0.59 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: | 1.9V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 250nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 14000pF @ 12V |
FET Feature: | -- |
Power Dissipation (Max): | 3.2W (Ta), 195W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-VSON-CLIP (5x6) |
Package / Case: | 8-PowerTDFN |
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The component CSD16570Q5B is a very important component in various industries and consumer applications. This component is classified as a single MOSFET, or metal oxide semiconductor field effect transistor. Such devices have revolutionized electronics over the past few decades, with impressive performance in key characteristics such as current carrying ability, voltage breakdown, and gate threshold voltage.
This component is used in a variety of applications. Among the most common are DC motor drives, power amplifiers and power converters, switching amplifiers, high frequency converters, and switching applications. The CSD16570Q5B also is used in automotive, chemical and manufacturing industries, where it is employed in voltage regulation, current rectification, switching, and other applications. Another key application area is with embedded systems, where these small and effective transistors are employed in communications, control, and logic circuits.
The working principle of the CSD16570Q5B is based on the principles of MOSFETs in general, which consists of a combination of junction field effect transistors and metal oxide semi-conductors. It is formed by creating a channel on the surface that is made up of a certain type of material, such as silicon. This channel is helped along by the presence of oxide layers on opposite sides, which function as insulators. However, when a voltage is applied to the gate, electrons are drawn from the source to the drain, creating a channel of low resistance. The CSD16570Q5B is then able to pass or block electric current based on the voltage applied to the gate.
The CSD16570Q5B is designed to offer excellent electrical performance, while maintaining good thermal capabilities. It can handle high currents, with voltage drops of under 0.04V, along with low on-resistance of around 0.7 mohms. It has a maximum breakdown voltage of 150V and can handle drain source voltages of 50V. Perhaps most notably, this component is capable of switching frequencies of up to 16 kHz. These attributes allow the CSD16570Q5B to meet the needs in a wide range of applications.
Overall, the CSD16570Q5B is considered to be a reliable and economical semiconductor device, offering features and capabilities that allow it to be employed in a variety of applications. This single metal oxide semiconductor field effect transistor can handle high currents, low on-resistance, and high switching frequencies, and is also capable of withstanding naturally occurring conditions such as temperature extremes and mechanical stress. As a result, it is a go-to component for many different applications in various industries.
The specific data is subject to PDF, and the above content is for reference
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