Allicdata Part #: | 296-44471-2-ND |
Manufacturer Part#: |
CSD19532Q5BT |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 100V 100A VSON |
More Detail: | N-Channel 100V 100A (Ta) 3.1W (Ta), 195W (Tc) Surf... |
DataSheet: | CSD19532Q5BT Datasheet/PDF |
Quantity: | 2500 |
Series: | NexFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 4.9 mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id: | 3.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 62nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4810pF @ 50V |
FET Feature: | -- |
Power Dissipation (Max): | 3.1W (Ta), 195W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-VSON-CLIP (5x6) |
Package / Case: | 8-PowerTDFN |
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A CSD19532Q5BT is a type of transistor, more specifically a field effect transistor (FET), made by Texas Instruments (TI). It belongs to the Single Mosfet family, and is designed to be used in a variety of different applications, ranging from low to medium power consumer and industrial applications to high power switching applications. In this article, we will look at the applications and working principles of this transistor, and discuss how it can be used in different scenarios.
Applications
The CSD19532Q5BT can be used in a variety of different consumer and industrial applications. Due to its low on-state resistance, this transistor can be used for high-efficiency switching applications. This includes applications like motor control, lighting, LED control, motor drivers, and general power supply applications. It is also useful in high speed control, as it can switch quickly from a high level to a low level.
The CSD19532Q5BT can also be used in other medium power applications, like drive circuits for DC-DC converters, audio amplifiers, and computer systems. It is also suitable for display driver applications, as it can be used to drive both low- and high-voltage signals. The low on-state resistance of this transistor also makes it a great choice for low-noise switching applications, like line input/output interfaces.
Working Principle
The CSD19532Q5BT is a P-channel enhancement type field effect transistor (FET). Its structure consists of a drain and a source, along with a channel that is controlled by an oxide layer. The oxide layer acts as a gate and allows electrons to pass through it, depending on the voltage applied to the gate. When the voltage applied to its gate reaches its threshold voltage, it becomes “turned on” and electrons begin to flow from the drain to the source, allowing current to flow.
When the voltage applied to the gate exceeds its threshold voltage, the transistor will be fully on, allowing the most current to flow. On the other hand, if the voltage applied to the gate is below the threshold voltage, then no current will flow, and the transistor will be in its “off” state. The CSD19532Q5BT can be used in many applications because of its low on-state resistance, high speed, improved temperature stability, and wide range of operating voltages.
Conclusion
The CSD19532Q5BT is a type of FET that is part of the Single Mosfet family. It is designed to be used in a variety of applications, ranging from low-power consumer and industrial applications to high power switching applications. The low on-state resistance of this transistor makes it a great choice for use in low noise, high-efficiency switching applications. Additionally, its high speed, improved temperature stability, and wide range of operating voltages make it useful for many different applications.
The specific data is subject to PDF, and the above content is for reference
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