CSD16340Q3T Allicdata Electronics
Allicdata Part #:

296-47752-2-ND

Manufacturer Part#:

CSD16340Q3T

Price: $ 0.64
Product Category:

Discrete Semiconductor Products

Manufacturer: Texas Instruments
Short Description: MOSFET N-CHANNEL 25V 60A 8VSON
More Detail: N-Channel 25V 60A (Tc) 3W (Ta) Surface Mount 8-VSO...
DataSheet: CSD16340Q3T datasheetCSD16340Q3T Datasheet/PDF
Quantity: 1000
1 +: $ 0.64000
10 +: $ 0.62080
100 +: $ 0.60800
1000 +: $ 0.59520
10000 +: $ 0.57600
Stock 1000Can Ship Immediately
$ 0.64
Specifications
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-VSON-CLIP (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 12.5V
Vgs (Max): +10V, -8V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 4.5V
Series: NexFET™
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 20A, 8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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CSD16340Q3T is a single N-channel field effect transistor (FET). This transistor is great for a variety of different applications and the integrated circuit has a wide range of uses. This article will focus on the application field and working principle of this particular transistor.

The CSD16340Q3T is used in high-power circuit applications and is also suitable for general-purpose switching and amplifier circuits. This transistor can also be used as a linear amplifier which achieves gain while still maintaining low noise levels. The integrated circuit offers low on-resistance and high breakdown voltage, making it well-suited for many different types of applications. This device is also great for high-speed switching, providing excellent switching speed and high frequency response.

The working principle of the CSD16340Q3T is fairly simple and straightforward. The device contains an N-channel metal-oxide-semiconductor (MOS) capacitor that functions as an electrical switch. When a voltage is applied at the gate of the capacitor, a small current will flow from the gate to the source. Initially, the gate is maintained at ground and the source and drain are connected to a power supply. As the gate voltage increases, the amount of current that passes from the source to the drain increases. When the voltage reaches a certain threshold, the current flowing through the transistor is regulated and the device is able to switch between high and low states.

The CSD16340Q3T is an excellent choice for a variety of different applications. It is well-suited for a number of different functions including high-power switching, linear amplifier applications, and high-speed switching. The device offers low on-resistance, high breakdown voltage, and excellent switching speed and frequency response. It is also useful for general-purpose switching and amplifier circuits. Overall, the CSD16340Q3T is a great choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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