| Allicdata Part #: | 296-47752-2-ND |
| Manufacturer Part#: |
CSD16340Q3T |
| Price: | $ 0.64 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Texas Instruments |
| Short Description: | MOSFET N-CHANNEL 25V 60A 8VSON |
| More Detail: | N-Channel 25V 60A (Tc) 3W (Ta) Surface Mount 8-VSO... |
| DataSheet: | CSD16340Q3T Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.64000 |
| 10 +: | $ 0.62080 |
| 100 +: | $ 0.60800 |
| 1000 +: | $ 0.59520 |
| 10000 +: | $ 0.57600 |
| Vgs(th) (Max) @ Id: | 1.1V @ 250µA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | 8-VSON-CLIP (3.3x3.3) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1350pF @ 12.5V |
| Vgs (Max): | +10V, -8V |
| Gate Charge (Qg) (Max) @ Vgs: | 9.2nC @ 4.5V |
| Series: | NexFET™ |
| Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 20A, 8V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 8V |
| Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
| Drain to Source Voltage (Vdss): | 25V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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CSD16340Q3T is a single N-channel field effect transistor (FET). This transistor is great for a variety of different applications and the integrated circuit has a wide range of uses. This article will focus on the application field and working principle of this particular transistor.
The CSD16340Q3T is used in high-power circuit applications and is also suitable for general-purpose switching and amplifier circuits. This transistor can also be used as a linear amplifier which achieves gain while still maintaining low noise levels. The integrated circuit offers low on-resistance and high breakdown voltage, making it well-suited for many different types of applications. This device is also great for high-speed switching, providing excellent switching speed and high frequency response.
The working principle of the CSD16340Q3T is fairly simple and straightforward. The device contains an N-channel metal-oxide-semiconductor (MOS) capacitor that functions as an electrical switch. When a voltage is applied at the gate of the capacitor, a small current will flow from the gate to the source. Initially, the gate is maintained at ground and the source and drain are connected to a power supply. As the gate voltage increases, the amount of current that passes from the source to the drain increases. When the voltage reaches a certain threshold, the current flowing through the transistor is regulated and the device is able to switch between high and low states.
The CSD16340Q3T is an excellent choice for a variety of different applications. It is well-suited for a number of different functions including high-power switching, linear amplifier applications, and high-speed switching. The device offers low on-resistance, high breakdown voltage, and excellent switching speed and frequency response. It is also useful for general-purpose switching and amplifier circuits. Overall, the CSD16340Q3T is a great choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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CSD16340Q3T Datasheet/PDF