CSD13381F4T Allicdata Electronics
Allicdata Part #:

296-37779-2-ND

Manufacturer Part#:

CSD13381F4T

Price: $ 0.13
Product Category:

Discrete Semiconductor Products

Manufacturer: Texas Instruments
Short Description: MOSFET N-CH 12V 2.1A 3PICOSTAR
More Detail: N-Channel 12V 2.1A (Ta) 500mW (Ta) Surface Mount 3...
DataSheet: CSD13381F4T datasheetCSD13381F4T Datasheet/PDF
Quantity: 1000
1 +: $ 0.13000
10 +: $ 0.12610
100 +: $ 0.12350
1000 +: $ 0.12090
10000 +: $ 0.11700
Stock 1000Can Ship Immediately
$ 0.13
Specifications
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Base Part Number: CSD13381
Package / Case: 3-XFDFN
Supplier Device Package: 3-PICOSTAR
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 500mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 6V
Vgs (Max): 8V
Series: FemtoFET™
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Rds On (Max) @ Id, Vgs: 180 mOhm @ 500mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The CSD13381F4T is a member of the Cool MOS Power Transistor family. It is a state-of-the-art N-Channel, single package, surface mount Power MOSFET with superior performance characteristics. It is ideally suited for use in low voltage applications and operates from DC up to 120V. The CSD13381F4T is ideal for use in a wide range of high-speed switching applications, including low power DC/DC converters, load switches, and voltage regulators.

The CSD13381F4T is designed primarily for high-current switching applications. Its high-speed switching characteristics and low internal gate capacitance result in exceptionally low on-resistance, low gate charge, and low power losses. It features an integrated gate resistor to reduce gate ringing, as well as an integrated gate current limiter to reduce peak gate current. Its low gate charge and low gate-to-drain capacitance makes it ideal for high-frequency applications.

The CSD13381F4T is a single N-Channel MOSFET, operating mainly in the depletion mode. When the gate voltage is applied, a depleted region, or RDS(on) region, forms along the channel. This, in combination with the higher threshold voltage, causes a drop in current flow from the Drain to Source. This effectively turns the MOSFET off and prevents current flowing through the device. When the gate voltage is removed, the depleted region re-forms and the MOSFET is turned on again.

The CSD13381F4T can handle high currents at lower voltages, up to 10A peak, 8.5A continuous with a minimum on-resistance of 0.081 ohms. Its low on-resistance minimizes power dissipation, allowing for more efficient designs. Thanks to its low gate charge and integrated gate current limiter, it can also handle higher peak currents than other devices, making it ideal for high-speed switching applications. Its built-in gate-protection diode also help protect the device against transients and overloads.

The CSD13381F4T is an easy-to-use and highly versatile device, making it suitable for a wide range of applications, such as automotive, lighting, and telecommunications. Its low on-resistance and high current capabilities make it an excellent choice for power converters, motor control, and switching applications. Thanks to its low gate charge, it can also be used in high-speed switching applications, such as stepper motor drivers, HVAC systems, and inverters.

The CSD13381F4T is a single, surface-mount Power MOSFET ideal for high-speed switching applications in both low and high voltage environments. Thanks to its low on-resistance and high current capabilities, it can be used for a wide range of applications, from power converters to lighting and telecommunications.

The specific data is subject to PDF, and the above content is for reference

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