Allicdata Part #: | 296-37779-2-ND |
Manufacturer Part#: |
CSD13381F4T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 12V 2.1A 3PICOSTAR |
More Detail: | N-Channel 12V 2.1A (Ta) 500mW (Ta) Surface Mount 3... |
DataSheet: | CSD13381F4T Datasheet/PDF |
Quantity: | 1000 |
Series: | FemtoFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 12V |
Current - Continuous Drain (Id) @ 25°C: | 2.1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 180 mOhm @ 500mA, 4.5V |
Vgs(th) (Max) @ Id: | 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 1.4nC @ 4.5V |
Vgs (Max): | 8V |
Input Capacitance (Ciss) (Max) @ Vds: | 200pF @ 6V |
FET Feature: | -- |
Power Dissipation (Max): | 500mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 3-PICOSTAR |
Package / Case: | 3-XFDFN |
Base Part Number: | CSD13381 |
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The CSD13381F4T is a member of the Cool MOS Power Transistor family. It is a state-of-the-art N-Channel, single package, surface mount Power MOSFET with superior performance characteristics. It is ideally suited for use in low voltage applications and operates from DC up to 120V. The CSD13381F4T is ideal for use in a wide range of high-speed switching applications, including low power DC/DC converters, load switches, and voltage regulators.
The CSD13381F4T is designed primarily for high-current switching applications. Its high-speed switching characteristics and low internal gate capacitance result in exceptionally low on-resistance, low gate charge, and low power losses. It features an integrated gate resistor to reduce gate ringing, as well as an integrated gate current limiter to reduce peak gate current. Its low gate charge and low gate-to-drain capacitance makes it ideal for high-frequency applications.
The CSD13381F4T is a single N-Channel MOSFET, operating mainly in the depletion mode. When the gate voltage is applied, a depleted region, or RDS(on) region, forms along the channel. This, in combination with the higher threshold voltage, causes a drop in current flow from the Drain to Source. This effectively turns the MOSFET off and prevents current flowing through the device. When the gate voltage is removed, the depleted region re-forms and the MOSFET is turned on again.
The CSD13381F4T can handle high currents at lower voltages, up to 10A peak, 8.5A continuous with a minimum on-resistance of 0.081 ohms. Its low on-resistance minimizes power dissipation, allowing for more efficient designs. Thanks to its low gate charge and integrated gate current limiter, it can also handle higher peak currents than other devices, making it ideal for high-speed switching applications. Its built-in gate-protection diode also help protect the device against transients and overloads.
The CSD13381F4T is an easy-to-use and highly versatile device, making it suitable for a wide range of applications, such as automotive, lighting, and telecommunications. Its low on-resistance and high current capabilities make it an excellent choice for power converters, motor control, and switching applications. Thanks to its low gate charge, it can also be used in high-speed switching applications, such as stepper motor drivers, HVAC systems, and inverters.
The CSD13381F4T is a single, surface-mount Power MOSFET ideal for high-speed switching applications in both low and high voltage environments. Thanks to its low on-resistance and high current capabilities, it can be used for a wide range of applications, from power converters to lighting and telecommunications.
The specific data is subject to PDF, and the above content is for reference
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