CSD16323Q3C Discrete Semiconductor Products |
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Allicdata Part #: | 296-28096-2-ND |
Manufacturer Part#: |
CSD16323Q3C |
Price: | $ 0.44 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 25V 60A 8SON |
More Detail: | N-Channel 25V 21A (Ta), 60A (Tc) 3W (Ta) Surface M... |
DataSheet: | CSD16323Q3C Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.40572 |
Series: | NexFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Ta), 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 3V, 8V |
Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 24A, 8V |
Vgs(th) (Max) @ Id: | 1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 8.4nC @ 4.5V |
Vgs (Max): | +10V, -8V |
Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 12.5V |
FET Feature: | -- |
Power Dissipation (Max): | 3W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SON-EP (3x3) |
Package / Case: | 8-PowerTDFN |
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The CSD16323Q3C is a Gen 4 210V N-Channel power MOSFET housed in a PowerFLAT 5x6 package. This device features latest low RDS(on) and has added diodes for improved ESD robustness, source to drain diode protection, and reduced parasitic inductance for improved power performance. As with all N-Channel MOSFETs, the CSD16323Q3C utilizes low impedance gates to control the device. The low impedance allows efficient switching while minimizing delays. Due to its exceptional performance, this MOSFET is suitable in many applications including power conversion and power extension circuits.
Application Field
The CSD16323Q3C is an excellent solution for high-frequency switching and load-switching applications. It offers many benefits in power-management circuits, including high-efficiency and low thermal emission. As a result, it makes an excellent choice for use in high-performance power converters and power systems, where efficiency and low heat are critical. Its wide range of current and temperature ratings also make it suitable for industrial, automotive, and consumer applications.
Working Principle
The CSD16323Q3C utilizes a source-drain structure to control the current entering or leaving the gate. As a result, it allows for enhanced control of the voltage and current entering and leaving the gate. The device also features a built-in body diode, which enhances the system\'s protection against overcurrent conditions. This can be beneficial for applications such as battery chargers, power converters, and DC-DC converters. The low RDS(on) value combined with the thermal characteristics ensures a low switching time.
Conclusion
The CSD16323Q3C is a high-performance Gen 4 210V N-Channel power MOSFET housed in a PowerFLAT 5x6 package. Its unique features make it suitable for many applications including power conversion, power extension, and power-management circuits. The device\'s low RDS(on), combined with its built-in body diode and thermal characteristics, makes it suitable for use in high-performance applications such as battery chargers, power converters, and DC-DC converters.
The specific data is subject to PDF, and the above content is for reference
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