CSD18542KTTT Allicdata Electronics
Allicdata Part #:

296-44124-2-ND

Manufacturer Part#:

CSD18542KTTT

Price: $ 1.46
Product Category:

Discrete Semiconductor Products

Manufacturer: Texas Instruments
Short Description: MOSFET N-CH 60V 200A D2PAK
More Detail: N-Channel 60V 200A (Ta), 170A (Tc) 250W (Tc) DDPA...
DataSheet: CSD18542KTTT datasheetCSD18542KTTT Datasheet/PDF
Quantity: 800
50 +: $ 1.32401
100 +: $ 1.19165
250 +: $ 1.05923
Stock 800Can Ship Immediately
$ 1.46
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Supplier Device Package: DDPAK/TO-263-3
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 250W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5070pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
Series: NexFET™
Rds On (Max) @ Id, Vgs: 4 mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Ta), 170A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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CSD18542KTTT is a type of Field-Effect Transistor (FET) that is specifically designed for Embedded Gate applications. It is a single-gate type of FET and offers maximum circuit flexibility, low input capacitance, high-speed switching, and low on resistance values. This FET also has a wide range of operating temperatures, making it well-suited for challenging environments. In this article, we will discuss the application field and working principle of CSD18542KTTT.

Applications of CSD18542KTTT:

The CSD18542KTTT FET is mainly used in applications such as power level translation, industrial control systems, and communications equipment. It can also be used in automotive and medical electronic systems as well as aerospace applications. Other common fields of application include over-voltage and over-current protection, high-speed switching, and linear load switching. Because of its low on-resistance values and superior switching performance, it is suitable for applications which require low power consumption.

Working Principle of CSD18542KTTT:

The CSD18542KTTT is a single-gate type of FET. As its name suggests, a single gate type FET is one in which the gate electrode is the only control element. The FET works on the principle of majority carrier transport. When the gate voltage is higher than the threshold voltage, majority carriers start to flow from the source to the drain. The drain current then increases, leading to an increase in channel conductance.

Unlike conventional FETs, the CSD18542KTTT is designed with advanced high-speed switching capability. It can switch on and off at higher rates than most other FETs which makes it ideal for use in high speed communications systems. Moreover, the FET is designed to provide low input capacitance. This makes it suitable for applications involving rapid voltage transitions.

The CSD18542KTTT is designed to operate over a wide range of temperatures. It is capable of functioning in temperatures ranging from -55°C to +150°C, making it well suitable for applications in extreme and challenging environments. Lastly, the FET is capable of offering robust performance even after long periods of operation.

Conclusion

In conclusion, the CSD18542KTTT is a single-gate type of FET that offers high-speed switching and low input capacitance. It is an ideal choice for applications in high speed communications systems, industrial control systems, and automotive and medical electronic systems. Additionally, the FET offers robust performance and operates in a wide range of temperatures, making it well-suited for challenging environments.

The specific data is subject to PDF, and the above content is for reference

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