Allicdata Part #: | 296-49601-2-ND |
Manufacturer Part#: |
CSD17579Q5A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 30V 25A 8VSON |
More Detail: | N-Channel 30V 25A (Ta) 3.1W (Ta), 36W (Tc) Surface... |
DataSheet: | CSD17579Q5A Datasheet/PDF |
Quantity: | 1000 |
Series: | NexFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 25A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 9.7 mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 15.1nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1030pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 3.1W (Ta), 36W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-VSONP (5x6) |
Package / Case: | 8-PowerTDFN |
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CSD17579Q5A is a single monolithic silicon-controlled rectifier, or SCR, that is designed to be used in applications requiring fast switching and high speed rectification. This device offers several features including low forward voltage drop, high peak current capability, and low reverse leakage. The CSD17579Q5A has the ability to withstand high voltage spikes, making it an ideal device for a variety of high voltage applications.
The CSD17579Q5A is a low-threshold device, meaning it requires a lower-than-usual gate-to-emitter voltage to switch on. This lowers the amount of power needed for switching, as well as reduces electrical noise. The device also has a high-frequency operation, allowing for fast switching and a low on-resistance, allowing for lower power consumption and improved efficiency.
The CSD17579Q5A is a metal-oxide-semiconductor field-effect transistor (MOSFET) and is made up of several components. The device is composed of a substrate, gate, drain, and source. The gate, drain, and source are made of metal and the substrate is usually made of silicon. The gate is the control element, which when charged, will cause current to flow between the drain and the source. The gate is insulated from the substrate and the other components, and it is this insulation that provides the voltage isolation necessary to control the flow of current.
The working principle of the CSD17579Q5A is the same as any other MOSFET device. The gate is responsible for controlling the current flow between the source and the drain, and the drain-to-source voltage is controlled by the gate voltage. When the gate voltage is increased, the source-to-drain voltage rises, and the current flow increases. Conversely, when the gate voltage is decreased, the source-to-drain voltage will fall and the current flow will reduce.
The CSD17579Q5A is ideal for a range of different applications. It can be used in power supplies, DC-DC converters, motor controls, and industrial control systems. It can also be used in communication systems, audio systems, or any other device or application that requires high speed switching.
In summary, the CSD17579Q5A is a single monolithic silicon-controlled rectifier that is designed to provide fast switching and high speed rectification. It is a metal-oxide-semiconductor field-effect transistor (MOSFET) that is composed of a substrate, gate, drain, and source. The device operates using the same principles as other MOSFETs, and is ideal for a range of applications that require high speed switching and low on-resistance.
The specific data is subject to PDF, and the above content is for reference
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