| Allicdata Part #: | 296-44472-2-ND |
| Manufacturer Part#: |
CSD19533Q5AT |
| Price: | $ 0.79 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Texas Instruments |
| Short Description: | MOSFET N-CH 100V 100A VSONP |
| More Detail: | N-Channel 100V 100A (Ta) 3.2W (Ta), 96W (Tc) Surfa... |
| DataSheet: |  CSD19533Q5AT Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.79000 |
| 10 +: | $ 0.76630 |
| 100 +: | $ 0.75050 |
| 1000 +: | $ 0.73470 |
| 10000 +: | $ 0.71100 |
| Vgs(th) (Max) @ Id: | 3.4V @ 250µA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | 8-VSONP (5x6) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.2W (Ta), 96W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2670pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
| Series: | NexFET™ |
| Rds On (Max) @ Id, Vgs: | 9.4 mOhm @ 13A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 100A (Ta) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The CSD19533Q5AT is a field effect transistor (FET), specifically a metal oxide semiconductor FET (MOSFET). It is classified as single MOSFET, which means that it uses one channel between its source and drain terminals. This channel is known as the “floating gate” and is mostly composed of semiconducting material, such as silicon dioxide. The CSD19533Q5AT is used in a variety of electronic applications, including audio amplifiers and voltage converters.
The working principle of the CSD19533Q5AT is based on the electric field-effect. As with all FETs, the electric field-effect of the CSD19533Q5AT is based on the electric field between its source and drain terminals. When an electric field is applied to the floating gate, electrons are moved from one terminal to the other, thus creating an electric current. This same electric field-effect is used in a variety of applications, including audio amplifiers and voltage converters.
The CSD19533Q5AT has other uses in addition to its audio amplifier and voltage converter applications. It is also used in power distribution systems, as well as solar power converters and LED lighting systems. It is also becoming increasingly popular for use in microprocessors, due to its ability to switch on and off quickly. The CSD19533Q5AT is also used in audio and video equipment, as well as RF circuits.
The CSD19533Q5AT is known for its low-noise characteristics and high levels of reliability. In addition, its low capacitance makes it suitable for frequency-dependent applications. The CSD19533Q5AT is available in a variety of formats, including leadless packages and surface mount devices. Depending on the package, the CSD19533Q5AT can be configured as an N-channel (N-FET) or a P-channel (P-FET) transistor.
Overall, the CSD19533Q5AT is an excellent choice for a variety of applications due to its low-noise characteristics, high levels of reliability, and low capacitance. It is available in a variety of formats, and it is suitable for frequency-dependent applications. With its flexibility and many uses, the CSD19533Q5AT is an excellent choice for a variety of projects.
The specific data is subject to PDF, and the above content is for reference
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