| Allicdata Part #: | 296-41412-2-ND |
| Manufacturer Part#: |
CSD13201W10 |
| Price: | $ 0.11 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Texas Instruments |
| Short Description: | MOSFET N-CH 12V 1.6A 4DSBGA |
| More Detail: | N-Channel 12V 1.6A (Ta) 1.2W (Ta) Surface Mount 4-... |
| DataSheet: |  CSD13201W10 Datasheet/PDF |
| Quantity: | 93000 |
| 1 +: | $ 0.11000 |
| 10 +: | $ 0.10670 |
| 100 +: | $ 0.10450 |
| 1000 +: | $ 0.10230 |
| 10000 +: | $ 0.09900 |
| Vgs(th) (Max) @ Id: | 1.1V @ 250µA |
| Package / Case: | 4-UFBGA, DSBGA |
| Supplier Device Package: | 4-DSBGA (1x1) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.2W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 462pF @ 6V |
| Vgs (Max): | ±8V |
| Gate Charge (Qg) (Max) @ Vgs: | 2.9nC @ 4.5V |
| Series: | NexFET™ |
| Rds On (Max) @ Id, Vgs: | 34 mOhm @ 1A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 1.6A (Ta) |
| Drain to Source Voltage (Vdss): | 12V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The CSD13201W10 is part of the family of N-channel MOSFETs, which provides improved balance between on-state and off-state performance. The MOSFET has a drain-to-source voltage of 10V and a channel type of enhancement-mode. It has a drain current of 56A, a maximum power dissipation of 200W and a threshold voltage of 2.6 V. With a gate-source voltage of 20V and an on-state resistance of 35mOhm, the CSD13201W10 is designed for applications that require low on-state resistance and high speed switching.
The MOSFET works by creating an electric field between the gate and the source, which means that current can be controlled by the gate voltage. When the voltage of the gate is high enough, the current flows from drain to source, thus turning the MOSFET "ON". When the voltage of the gate drops below the threshold voltage (Vth) of the transistor, the current stops flowing, thus turning the MOSFET "OFF".
The MOSFET can be used in a variety of applications, such as power MOSFETs, power conversion, and power switching circuits. In power MOSFETs it is used in voltage regulators and can also be used in pulse width modulation (PWM) circuits. In power conversion, the MOSFET can be used in buck, boost, and buck-boost converter circuits. In power switching circuits, it can be used in power switching applications such as audio amplifiers and DC motor drives.
The CSD13201W10 also has a number of advantages. These include a high breakdown voltage, a wide drain current range, a low gate-to-source capacitance, and an ultra-low on-state resistance that improves its performance in high switching frequency applications. Additionally, the MOSFET has a low gate charge and a high linearity, making it well suited for power management.
The CSD13201W10 is a highly efficient and powerful device that is ideal for applications that require low on-state resistance, high speed switching, and improved balance between on-state and off-state performance. Its features make it suitable for use in power MOSFETs, power conversion, and power switching circuits.
The specific data is subject to PDF, and the above content is for reference
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