Allicdata Part #: | 296-29021-2-ND |
Manufacturer Part#: |
CSD17527Q5A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 30V 65A 8SON |
More Detail: | N-Channel 30V 65A (Tc) 3W (Ta) Surface Mount 8-VSO... |
DataSheet: | CSD17527Q5A Datasheet/PDF |
Quantity: | 25000 |
Series: | NexFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 65A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 10.8 mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 3.4nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 506pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 3W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-VSONP (5x6) |
Package / Case: | 8-PowerTDFN |
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CSD17527Q5A is an N-Channel power MOSFET from Texas Instruments’ NexFET™ family. It is a high-performance device designed for high frequency power systems and supports IR-drop applications because of its low on-resistance characteristics.
This device offers superior efficiency for portable and high-current applications, such as notebook PCs, LCD TVs, HDD motor drives, and other power-sensitive applications. It also saves energy by reducing time-in-state and standby power.
The CSD17527Q5A is constructed with a single gate electrode and the gate electrode is insulated from the source and drain electrode by a gate oxide. This allows the device to be electrically switched on and off, providing the device with a low on-resistance and low power operation. The single gate electrode also makes the device ideal for controlling high power signals.
The CSD17527Q5A has the advantage of being able to operate in either depletion or enhancement mode. In depletion mode, the gate voltage is applied to increase the drain current, and in enhancement mode, the gate voltage is applied to reduce the drain current. The ability to operate in both modes allows the device to be used in applications such as AC/DC converters and DC/DC converters.
The CSD17527Q5A is ideal for applications such as personal computers, digital cameras, LCD TVs, and HDD motor drives due to its low on-resistance and high power switching characteristics. It is also capable of working with high frequency signals to minimize power loss and minimize the size of the package. The low on-resistance characteristics of the device make it ideal for reducing power loss and increasing efficiency in these applications.
The working principle of the CSD17527Q5A power MOSFET is simple. When a positive voltage is applied to the gate electrode, the positive charge repels the electrons away from the drain, allowing the current to flow between the source and the drain. This current flow is determined by the voltage applied to the gate of the device and the on-resistance. When the gate voltage is removed, the device turns off and the on-resistance drops significantly.
In addition to its low on-resistance, the CSD17527Q5A also has a high switching speed. This allows it to perform in high frequency applications without compromising power efficiency. The device also supports IR-drop applications because of its low gate voltage drive requirements and its low on-resistance. The device is capable of switching high power levels with minimal power loss. The CSD17527Q5A is also able to operate in temperatures over 125°C, making it suitable for a variety of high-temperature applications.
Overall, the CSD17527Q5A provides great performance for high-current applications such as notebook PCs, LCD TVs, HDD motor drives and other power-sensitive applications. It is capable of operating at high frequencies and in temperatures over 125°C. The low on-resistance characteristics of the device make it ideal for reducing power loss and increasing efficiency in these applications. The device is also able to support IR-drop applications due to its low gate voltage drive requirements and its low on-resistance.
The specific data is subject to PDF, and the above content is for reference
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