Allicdata Part #: | 296-27210-2-ND |
Manufacturer Part#: |
CSD17308Q3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 30V 47A 8SON |
More Detail: | N-Channel 30V 14A (Ta), 44A (Tc) 2.7W (Ta) Surface... |
DataSheet: | CSD17308Q3 Datasheet/PDF |
Quantity: | 42500 |
Series: | NexFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Ta), 44A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 3V, 8V |
Rds On (Max) @ Id, Vgs: | 10.3 mOhm @ 10A, 8V |
Vgs(th) (Max) @ Id: | 1.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 5.1nC @ 4.5V |
Vgs (Max): | +10V, -8V |
Input Capacitance (Ciss) (Max) @ Vds: | 700pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 2.7W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-VSON-CLIP (3.3x3.3) |
Package / Case: | 8-PowerTDFN |
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CSD17308Q3 is a MOSFET transistor made of a silicon material that is designed to provide fast switching and low resistance. This transistor is typically used in applications such as power management, DC/DC conversion, switch mode power supplies, level shifting, interface, and sensing. In addition, CSD17308Q3 is ideal for supply voltage rail clamping applications, where its low threshold voltage (Vth) and low on-resistance (Rdson) reduce conduction and dissipated losses.
Application Field: CSD17308Q3 is mainly used for power management, DC/DC conversion, switch mode power supplies, level shifting, interface, and sensing. Its fast switching and low on-resistance provide a great choice for applications that require high currents, which require high efficiency and low gain. This also makes it suitable for supply rail clamping applications, as its low threshold voltage and low resistance can reduce conduction and dissipated losses.
Working Principle: CSD17308Q3 is a silicon material based MOSFET. The transistor operates by acting as a voltage-controlled switch, allowing a user to easily control the current flow in an external circuit.
When the transistor is off, the external circuit is isolated from the input signal as the gate is pulled low. When the transistor is on, the current flow is allowed in the external circuit as the gate is pulled high.
Transistors, including MOSFETs, can control the direction and the magnitude of current flow in an external circuit by simply changing the input voltage applied to the gate. This makes them ideal for power management, and high frequency applications.
When an input signal is applied to the gate of the MOSFET inCSD17308Q3, electrons from the subthreshold current, drain current, and bulk current flow. This generates a channel, which allows current to flow from the source to the drain.
This is known as the depletion mode, and this channel continues to exist until the threshold voltage of the MOSFET is reached. At this point, the MOSFET is considered to be off, and current flow is stopped.
When the input voltage increases above the threshold voltage, the drain current increases and the MOSFET is considered to be on. The amount of current flow through the MOSFET is proportional to the difference between the threshold voltage and the input voltage.
Hence, CSD17308Q3 provides a great solution for transistors used in applications that require high currents, with low gain and high efficiency, making it an ideal choice for many power management applications.
The specific data is subject to PDF, and the above content is for reference
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