| Allicdata Part #: | 296-27509-2-ND |
| Manufacturer Part#: |
CSD17304Q3 |
| Price: | $ 0.29 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Texas Instruments |
| Short Description: | MOSFET N-CH 30V 56A 8SON |
| More Detail: | N-Channel 30V 15A (Ta), 56A (Tc) 2.7W (Ta) Surface... |
| DataSheet: | CSD17304Q3 Datasheet/PDF |
| Quantity: | 12500 |
| 1 +: | $ 0.29000 |
| 10 +: | $ 0.28130 |
| 100 +: | $ 0.27550 |
| 1000 +: | $ 0.26970 |
| 10000 +: | $ 0.26100 |
| Vgs(th) (Max) @ Id: | 1.8V @ 250µA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | 8-VSON-CLIP (3.3x3.3) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.7W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 955pF @ 15V |
| Vgs (Max): | +10V, -8V |
| Gate Charge (Qg) (Max) @ Vgs: | 6.6nC @ 4.5V |
| Series: | NexFET™ |
| Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 17A, 8V |
| Drive Voltage (Max Rds On, Min Rds On): | 3V, 8V |
| Current - Continuous Drain (Id) @ 25°C: | 15A (Ta), 56A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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。The CSD17304Q3 is a next-generation trench MOSFET power transistor. It is vastly superior to previous versions of MOSFETs and can be used in a variety of applications. This transistor effectively combines the power density of the trench technology with the efficiency of the new generation circuitry.
The primary application areas for CSD17304Q3 transistors include automotive, industrial, and consumer electronics. Its low current drain and low gate charge are ideal for automobile applications like battery management, electric power steering, and motor control. Its wider range of operating temperatures makes it a great choice for industrial applications like welding and motor control in harsh environments. Its high frequency performance and power density make it an excellent option for consumer applications like LED lighting and other power switching applications.
The core operating principle of the CSD17304Q3 revolves around its advanced trench technology. This technology uses a distinct, multiple-level trench structure to create vertical channels in the “on” state of its transistors, which results in increased current flow and improved switching speeds. This also provides higher efficiency and power density, as well as improved EMI/EMC characteristics (electromagnetic interference/compatibility). The gates of the transistors are made from polysilicon, which makes them more reliable than traditional silicon gates.
The CSD17304Q3 is a single-channel MOSFET transistor, meaning it has only one channel for the flow of electricity. It does not require an additional driver circuit to operate, and it can handle up to 10A of continuous current. Its low on-resistance (Rds) and low gate drive input capacitance (Cgs), ensure both high efficiency and low power consumption. It also has a low “Miller” capacitance (Cm), which is a measure of the dV/dt of the voltage seen by the gate driver, mitigating “charge injection” into the gate drive. This low charge injection reduces the need for sophisticated gate-driver designs, simplifying integration into a wide range of applications.
In summary, the CSD17304Q3 is a versatile and reliable power transistor with numerous advantages over existing transistors, making it a highly sought-after device for a wide range of applications. Its advanced trench technology, low current drain, low gate charge, and its low on-resistance and gate-drive input capacitance make it an excellent choice for industrial, automotive, and consumer applications. With its impressive power density, it is capable of meeting the highest performance requirements of electric-vehicle and consumer electronics.
The specific data is subject to PDF, and the above content is for reference
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CSD17304Q3 Datasheet/PDF