Allicdata Part #: | 296-25795-2-ND |
Manufacturer Part#: |
CSD17301Q5A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 30V 28A 8SON |
More Detail: | N-Channel 30V 28A (Ta), 100A (Tc) 3.2W (Ta) Surfac... |
DataSheet: | CSD17301Q5A Datasheet/PDF |
Quantity: | 2500 |
Vgs(th) (Max) @ Id: | 1.55V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-VSONP (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3480pF @ 15V |
Vgs (Max): | +10V, -8V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 4.5V |
Series: | NexFET™ |
Rds On (Max) @ Id, Vgs: | 2.6 mOhm @ 25A, 8V |
Drive Voltage (Max Rds On, Min Rds On): | 3V, 8V |
Current - Continuous Drain (Id) @ 25°C: | 28A (Ta), 100A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The CSD17301Q5A is a P-channel, low-voltage 18V, 26mΩ MOSFET. It is a single-DPAK device with a drain current rating of up to 5A. This MOSFET is widely used in various applications due to its small size, low on-resistance, and low-voltage operation.
The CSD17301Q5A features a wide range of features and operational characteristics including low gate charge, fast switching times, and low on-resistance. It is available in a wide selection of P-channel packages, including the single-DPAK package described here. The single-DPAK package is designed to fit in tight spaces with minimal real estate requirement, making it ideal for applications that require a small form factor.
The CSD17301Q5A operates using a process of charge transfer across a channel between the source and drain of the MOSFET. A voltage applied to the gate causes a thin electrical field to form across the channel, which allows the MOSFET to be turned on or off. The thin electrical field that forms across the channel of the MOSFET allows charge carriers to move between the source and drain, resulting in an electrical current flowing between these two elements. The amount of current flowing through the MOSFET is controlled by the amount of voltage applied to the gate.
One of the main advantages of the CSD17301Q5A is its low on-resistance. Its drain current capability is rated at up to 5A, which makes it suitable for applications requiring high current, such as low dropout linear regulators and current-mode PWM controllers. Its low on-resistance means that it can achieve a higher current density over longer distances without significant drops in voltage, making it ideal for use in a variety of power supply and high power DC-DC conversion applications.
The CSD17301Q5A is also very fast switching, with a typical turn-on time of 110ns and a turn-off time of 150ns. This makes it suitable for use in a variety of high-speed switching applications, particularly those in which very fast switching times are required. Additionally, its low gate charge of 5.5nC means that there is a lower power dissipation when the MOSFET is switched on and off, making it ideal for use in power-sensitive applications.
Overall, the CSD17301Q5A is a versatile and reliable MOSFET that is suitable for use in a variety of applications. Its low on-resistance, fast switching times, and low gate charge make it attractive for use in a variety of power supply and high-power DC-DC conversion applications. Additionally, its small size and low-voltage operation make it suitable for even the most space-constrained applications.
The specific data is subject to PDF, and the above content is for reference
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