CSD18511KTT

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CSD18511KTT (also known as the ChipFET) is a single enhancement-mode N-channel MOSFET (metal oxide semiconductor field effect transistor).

The device is made up of a single MOSFET transistor, which enables it to be used as a single power field effect transistor (PowerFET). A MOSFET works by using the mobile nature of electrons in a metal to modulate electrical signals in a circuit. It contains a gate, a source, and a drain, which form an electric circuit. By applying a voltage to the gate, the gate controls the flow of current between the source and the drain.

The CSD18511KTT is specifically designed for low-voltage, power-switching applications which require high power efficiency. It has a drainage-source voltage (Vds) of 20V and can handle a maximum continuous current of 18A with a low temporal thermal resistance (R_th) of 0.21°C/W. It has an extremely low on-state resistance (R_DS(on)) of 1.2mΩ and an extremely fast switching speed of 1.8μs. Its excellent characteristics, such as its low RDS(on), low gate-charge and fast switching speed, make the CSD18511KTT an ideal solution for premium-performance power-switching applications.

The device is suitable for a wide range of applications such as DC/DC converters, DC/AC inverters, motor control and battery management systems. In DC/DC and DC/AC converters, the CSD18511KTT functions as a switch for the external power stage, allowing it to provide efficient power conversion. It minimizes losses associated with current transition across the power stage and enhances the overall performance of the converter. In motor control and battery management systems, the device offers increased precision by creating extremely fast switching speeds. This makes the CSD18511KTT an ideal device for automotive and industrial motor control applications.

The working principle of the CSD18511KTT is relatively simple. The gate voltage (V_GS) controls the flow of electrons from the source to the drain. When the gate voltage is below a certain threshold (V_th), the MOSFET is “off” and no current can flow from the source to the drain. When the gate voltage is above the threshold voltage, the MOSFET turns “on” and current can flow from the source to the drain in proportion to the gate voltage, which is referred to as the “transfer characteristic”.

The gate charge (Q_g) is an important parameter to consider when determining the operating voltage of the device. The total gate charge that is required to turn the device ‘on’ and ‘off’ can be calculated using the gate charge curve. The gate charge determines the operating voltage of the device and the gate voltage required to turn the device ‘on’ and ‘off’. It is important to ensure that the gate charge of the device is within the safe operating limits of the device.

In summary, the CSD18511KTT is a single enhancement-mode N-channel MOSFET ideally suited for low-voltage, power-switching applications. Its low RDS(on), low gate charge and fast switching speed make it an ideal solution for premium-performance power-switching applications. The working principle of the device is relatively simple as the gate voltage (V_GS) controls the flow of electrons from the source to the drain. The total gate charge needs to be calculated accurately to ensure it is within the safe operating limits of the device. This device is suitable for a wide range of applications, from DC/DC or DC/AC converters to motor control applications.

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